No. |
Part Name |
Description |
Manufacturer |
15121 |
MHVIC915 |
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier |
Motorola |
15122 |
MHVIC915R2 |
CDMA, GSM/GSM EDGE 746–960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier |
Freescale (Motorola) |
15123 |
MHVIC915R2 |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier |
Motorola |
15124 |
MHVIC915R2/D |
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier |
Motorola |
15125 |
MIC2507 |
Quad Integrated High-Side Switch |
Micrel Semiconductor |
15126 |
MIC2507BM |
Quad Integrated High-Side Switch Not Recommended for New Designs |
Micrel Semiconductor |
15127 |
MIC2514 |
IttyBittyTM Integrated High-Side Switch |
Micrel Semiconductor |
15128 |
MIC2514BM5 |
IttyBitty Integrated High-Side Switch Preliminary Information |
Micrel Semiconductor |
15129 |
MIC5312 |
LowQ Mode Dual 300mA LDO with Integrated POR |
Micrel Semiconductor |
15130 |
MIC5312-DKBML |
LowQ Mode Dual 300mA LDO with Integrated POR |
Micrel Semiconductor |
15131 |
MIC5312-GMBML |
LowQ Mode Dual 300mA LDO with Integrated POR |
Micrel Semiconductor |
15132 |
MICREL_KS8695 |
CENTAUR Integrated Multi-Port Gateway Solutions |
Micrel Semiconductor |
15133 |
MIG20J806HA |
Silicon N-channel integrated IGBT module for high power switching, motor control applications |
TOSHIBA |
15134 |
MIG30J901 |
INTEGRATED GTR MODULE |
TOSHIBA |
15135 |
MIG30J901H |
INTEGRATED GTR MODULE |
TOSHIBA |
15136 |
MIG30J951H |
INTEGRATED GTR MODULE |
TOSHIBA |
15137 |
MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
15138 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
15139 |
MJE18002D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
15140 |
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS |
ON Semiconductor |
15141 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
15142 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
15143 |
MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
15144 |
MK1410 |
NTSC/PAL Clock Source |
Integrated Circuit Systems |
15145 |
MK1410S |
NTSC/PAL Clock Source |
Integrated Circuit Systems |
15146 |
MK1410STR |
NTSC/PAL Clock Source |
Integrated Circuit Systems |
15147 |
MK1411S |
NTSC/PAL Clock Source |
Integrated Circuit Systems |
15148 |
MK1411STR |
NTSC/PAL Clock Source |
Integrated Circuit Systems |
15149 |
MK1412 |
MPEG Audio Clock Synthesizer |
Integrated Circuit Systems |
15150 |
MK1412A |
MPEG Audio Clock Synthesizer |
Integrated Circuit Systems |
| | | |