| No. |
Part Name |
Description |
Manufacturer |
| 15181 |
PZU8.2B |
Single Zener diodes in a SOD323F package |
NXP Semiconductors |
| 15182 |
PZU8.2B1 |
Single Zener diodes in a SOD323F package |
Nexperia |
| 15183 |
PZU8.2B1 |
Single Zener diodes in a SOD323F package |
NXP Semiconductors |
| 15184 |
PZU8.2B2 |
Single Zener diodes in a SOD323F package |
Nexperia |
| 15185 |
PZU8.2B2 |
Single Zener diodes in a SOD323F package |
NXP Semiconductors |
| 15186 |
PZU8.2B3 |
Single Zener diodes in a SOD323F package |
Nexperia |
| 15187 |
PZU8.2B3 |
Single Zener diodes in a SOD323F package |
NXP Semiconductors |
| 15188 |
PZU9.1B |
Single Zener diodes in a SOD323F package |
Nexperia |
| 15189 |
PZU9.1B |
Single Zener diodes in a SOD323F package |
NXP Semiconductors |
| 15190 |
PZU9.1B1 |
Single Zener diodes in a SOD323F package |
Nexperia |
| 15191 |
PZU9.1B1 |
Single Zener diodes in a SOD323F package |
NXP Semiconductors |
| 15192 |
PZU9.1B2 |
Single Zener diodes in a SOD323F package |
Nexperia |
| 15193 |
PZU9.1B2 |
Single Zener diodes in a SOD323F package |
NXP Semiconductors |
| 15194 |
PZU9.1B3 |
Single Zener diodes in a SOD323F package |
Nexperia |
| 15195 |
PZU9.1B3 |
Single Zener diodes in a SOD323F package |
NXP Semiconductors |
| 15196 |
Q62702G0077 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) |
Siemens |
| 15197 |
RAG115 |
15A 100V Silicon Rectifier Diode mounted in a special plastic case RAG |
IPRS Baneasa |
| 15198 |
RAG215 |
15A 200V Silicon Rectifier Diode mounted in a special plastic case RAG |
IPRS Baneasa |
| 15199 |
RDHA720SF06A1NK |
Radiation Hardened 60V 20A Solid-State Relay in a hermetic package. Configured as a single-pole-single-throw (SPST) normally open relay. |
International Rectifier |
| 15200 |
RFS1006 |
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ... |
Anadigics Inc |
| 15201 |
RFSP2010 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... |
Anadigics Inc |
| 15202 |
RFSP2020 |
The RFS P2020 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... |
Anadigics Inc |
| 15203 |
RFSP5022 |
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ... |
Anadigics Inc |
| 15204 |
RFY220 |
N-Channel MOSFET in a Hermetically sealed to257AB Metal Package. |
SemeLAB |
| 15205 |
RTP315N10F7 |
Aerospace and defence N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package |
ST Microelectronics |
| 15206 |
S2803R3S |
Hi-Rel DC-DC Rad-Hard Single Converter in a S package with 3.3 Vout |
International Rectifier |
| 15207 |
S2805D |
10W Total Output Power 28 Vin +/-5 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04242 |
International Rectifier |
| 15208 |
S2805S |
Hi-Rel DC-DC Rad-Hard Single Converter in a S package with 5 Vout |
International Rectifier |
| 15209 |
S2807S |
10W Total Output Power 28 Vin +7 Vout Single DC-DC Radiation Hardened Converter in a S Package. |
International Rectifier |
| 15210 |
S2812D |
10W Total Output Power 28 Vin +/-12 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04243 |
International Rectifier |
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