No. |
Part Name |
Description |
Manufacturer |
15211 |
2N6510 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
15212 |
2N6511 |
High-Voltage, High-Current Silicon NPN Power-Switching Transistor |
RCA Solid State |
15213 |
2N6511 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
15214 |
2N6512 |
High-Voltage, High-Current Silicon NPN Power-Switching Transistor |
RCA Solid State |
15215 |
2N6512 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
15216 |
2N6513 |
High-Voltage, High-Current Silicon NPN Power-Switching Transistor |
RCA Solid State |
15217 |
2N6513 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
15218 |
2N6514 |
High-Voltage, High-Current Silicon NPN Power-Switching Transistor |
RCA Solid State |
15219 |
2N6514 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
15220 |
2N6515 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
15221 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
15222 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
15223 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
15224 |
2N6515 |
Ic=500mA, Vce=10V transistor |
MCC |
15225 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
15226 |
2N6515 |
High voltage NPN transistor |
Motorola |
15227 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
15228 |
2N6515 |
NPN Epitaxial Silicon High Voltage Transistor |
Samsung Electronic |
15229 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
15230 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
15231 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
15232 |
2N6516 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
15233 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
15234 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
15235 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
15236 |
2N6516 |
High voltage NPN transistor |
Motorola |
15237 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
15238 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
15239 |
2N6517 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
15240 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
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