| No. |
Part Name |
Description |
Manufacturer |
| 1531 |
B05S-HF |
Halogen Free Bridge Rectifiers, VRRM=50V, VDC=50V, IAV=0.8A |
Comchip Technology |
| 1532 |
B05S-HF |
Halogen Free Bridge Rectifiers, VRRM=50V, VDC=50V, IAV=0.8A |
Comchip Technology |
| 1533 |
B150_B |
50V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 1534 |
B250/220-20Si |
Silicon rectifier bridge 20A/250V |
RFT |
| 1535 |
B250_A |
50V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 1536 |
B350_A_B |
50V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 1537 |
BA172 |
50V General use silicon epitaxial planar diode |
IPRS Baneasa |
| 1538 |
BAS21M3 |
250V HIGH VOLTAGE SWITCHING DIODE |
ON Semiconductor |
| 1539 |
BAT82 |
Diode Schottky 50V 0.03A 2-Pin DO-34 |
New Jersey Semiconductor |
| 1540 |
BAX13 |
Diode Switching 50V 0.3A 2-Pin DO-35 |
New Jersey Semiconductor |
| 1541 |
BC182 |
0.350W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 40 - hFE |
Continental Device India Limited |
| 1542 |
BC182 |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 1543 |
BC182A |
0.350W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 40 - hFE |
Continental Device India Limited |
| 1544 |
BC182A |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 1545 |
BC182B |
0.350W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 40 - hFE |
Continental Device India Limited |
| 1546 |
BC182B |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 1547 |
BC182KB |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 1548 |
BC182L |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 1549 |
BC182LA |
Trans GP BJT NPN 50V 0.5A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 1550 |
BC182LB |
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 1551 |
BC212 |
0.350W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - hFE |
Continental Device India Limited |
| 1552 |
BC212B |
0.350W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 40 - hFE |
Continental Device India Limited |
| 1553 |
BC212L |
0.350W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - hFE |
Continental Device India Limited |
| 1554 |
BC212LB |
0.350W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 400 hFE |
Continental Device India Limited |
| 1555 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1556 |
BC297 |
V(ces): 50V; V(ceo): 45V; V(ebo): 5V; 1A; audio driver |
SGS Thomson Microelectronics |
| 1557 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 1558 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 1559 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
| 1560 |
BC550 |
Transistor. Switching and AF amplifier. Low noise. Vcbo = 50V, Vceo= 45V, Vebo = 5V, Pc = 500mW, Ic = 100mA. |
USHA India LTD |
| | | |
