No. |
Part Name |
Description |
Manufacturer |
1531 |
2N1711 |
General purpose NPN transistor |
FERRANTI |
1532 |
2N1711 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
1533 |
2N1711 |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
1534 |
2N1711 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
1535 |
2N1711 |
Silicon NPN transistor, general purpose |
SESCOSEM |
1536 |
2N1711 |
EPITAXIAL PLANAR NPN |
ST Microelectronics |
1537 |
2N1711 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
1538 |
2N1711A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
1539 |
2N1711A |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
1540 |
2N1711B |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1541 |
2N1716 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1542 |
2N1717 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1543 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
1544 |
2N1792 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1545 |
2N1793 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1546 |
2N1794 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1547 |
2N1795 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1548 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1549 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1550 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1551 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1552 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1553 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1554 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
1555 |
2N1839 |
General purpose transistor |
Boca Semiconductor Corporation |
1556 |
2N1889 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1557 |
2N1889 |
Silicon NPN transistor, general purpose |
SESCOSEM |
1558 |
2N1890 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1559 |
2N1890 |
Silicon NPN transistor, general purpose |
SESCOSEM |
1560 |
2N1893 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
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