| No. |
Part Name |
Description |
Manufacturer |
| 1531 |
PKB32003U |
Microwave Power Transistor for use in common-base class-B power amplifiers up to 3GHz |
Philips |
| 1532 |
PKB32005U |
Microwave Power Transistor for use in common-base class-B power amplifiers up to 3GHz |
Philips |
| 1533 |
PO73-A-JJ |
RFCO-AXIAL CONNECTORS(COAXIAL CONNECTORS for use with HRPI) |
Hirose Electric |
| 1534 |
PO73-J-2.5CV |
RFCO-AXIAL CONNECTORS(COAXIAL CONNECTORS for use with HRPI) |
Hirose Electric |
| 1535 |
PO73-MP-3CW |
RFCO-AXIAL CONNECTORS(COAXIAL CONNECTORS for use with HRPI) |
Hirose Electric |
| 1536 |
PO73-P-2.5CV |
RFCO-AXIAL CONNECTORS(COAXIAL CONNECTORS for use with HRPI) |
Hirose Electric |
| 1537 |
PO73-P-3CT |
RFCO-AXIAL CONNECTORS(COAXIAL CONNECTORS for use with HRPI) |
Hirose Electric |
| 1538 |
PO73-P-3CV |
RFCO-AXIAL CONNECTORS(COAXIAL CONNECTORS for use with HRPI) |
Hirose Electric |
| 1539 |
PO73-P-3CW |
RFCO-AXIAL CONNECTORS(COAXIAL CONNECTORS for use with HRPI) |
Hirose Electric |
| 1540 |
PO73-TMP-75-025 |
RFCO-AXIAL CONNECTORS(COAXIAL CONNECTORS for use with HRPI) |
Hirose Electric |
| 1541 |
PO73-UPA-12.7 |
RFCO-AXIAL CONNECTORS(COAXIAL CONNECTORS for use with HRPI) |
Hirose Electric |
| 1542 |
PO73D-P-2.5DW |
RFCO-AXIAL CONNECTORS(COAXIAL CONNECTORS for use with HRPI) |
Hirose Electric |
| 1543 |
Q62702-A1084 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
| 1544 |
Q62702-A1145 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 1545 |
Q62702-A1270 |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 1546 |
Q62702-B0904 |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units) |
Siemens |
| 1547 |
Q62702-B478 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
Siemens |
| 1548 |
Q62702-B592 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
Siemens |
| 1549 |
Q62702-B628 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
Siemens |
| 1550 |
Q62702-B802 |
Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) |
Siemens |
| 1551 |
RFS1003 |
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ... |
Anadigics Inc |
| 1552 |
RFS1006 |
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ... |
Anadigics Inc |
| 1553 |
RFSP2010 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... |
Anadigics Inc |
| 1554 |
RFSP2020 |
The RFS P2020 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... |
Anadigics Inc |
| 1555 |
RFSP5022 |
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ... |
Anadigics Inc |
| 1556 |
RN1544 |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) For use in Muting and Switching Applications. |
TOSHIBA |
| 1557 |
S54H60 |
Dual 4-Input expander (for use with S55H50, S54H53, S54H55 circuits) |
Signetics |
| 1558 |
S54H60A |
Dual 4-Input expander (for use with S55H50, S54H53, S54H55 circuits) |
Signetics |
| 1559 |
S54H60F |
Dual 4-Input expander (for use with S55H50, S54H53, S54H55 circuits) |
Signetics |
| 1560 |
S54H60W |
Dual 4-Input expander (for use with S55H50, S54H53, S54H55 circuits) |
Signetics |
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