| No. |
Part Name |
Description |
Manufacturer |
| 1531 |
2N1021 |
PNP germanium power transistor for industrial applications |
Motorola |
| 1532 |
2N1022 |
PNP germanium power transistor for industrial applications |
Motorola |
| 1533 |
2N1132 |
PNP Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1534 |
2N1613 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1535 |
2N1613 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 1536 |
2N1613 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 1537 |
2N1613 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
ST Microelectronics |
| 1538 |
2N1711 |
Silicon NPN Planar Transistor for general and AF amplifiers |
AEG-TELEFUNKEN |
| 1539 |
2N1711 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1540 |
2N1711 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 1541 |
2N1711 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 1542 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 1543 |
2N178 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 1544 |
2N1792 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1545 |
2N1793 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1546 |
2N1794 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1547 |
2N1795 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1548 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1549 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1550 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1551 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1552 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1553 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1554 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1555 |
2N1893 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1556 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
| 1557 |
2N1909 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1558 |
2N1910 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1559 |
2N1911 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1560 |
2N1912 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
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