No. |
Part Name |
Description |
Manufacturer |
1531 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
1532 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
1533 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
1534 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
1535 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
1536 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
1537 |
TC74HC670AF |
4 WORD X 4 BIT REGISTER FILE (3-STATE) |
TOSHIBA |
1538 |
TC74HC670AP |
4 WORD X 4 BIT REGISTER FILE (3-STATE) |
TOSHIBA |
1539 |
TMM2114AP |
1024 Word x 4 Bit Static RAM |
TOSHIBA |
1540 |
TMM41464 |
65536 Word x 4 Bit Dynamic Ram |
TOSHIBA |
1541 |
TMP87P809M |
ROM: 4K x 4 bits; RAM: 256 x 8 bits; V(dd): -0.3 to 6.5V; V(in): -0.3 to +0.3V; CMOS 8-bit microcontroller |
TOSHIBA |
1542 |
TMP87P809N |
ROM: 4K x 4 bits; RAM: 256 x 8 bits; V(dd): -0.3 to 6.5V; V(in): -0.3 to +0.3V; CMOS 8-bit microcontroller |
TOSHIBA |
1543 |
V53C317405A-50K |
4M x 4 bit EDO page mode CMOS DRAM, 50ns, 3.3V |
Mosel Vitelic Corp |
1544 |
V53C317405A-50T |
4M x 4 bit EDO page mode CMOS DRAM, 50ns, 3.3V |
Mosel Vitelic Corp |
1545 |
V53C317405A-60K |
4M x 4 bit EDO page mode CMOS DRAM, 60ns, 3.3V |
Mosel Vitelic Corp |
1546 |
V53C317405A-60T |
4M x 4 bit EDO page mode CMOS DRAM, 60ns, 3.3V |
Mosel Vitelic Corp |
1547 |
V53C516400A-50K |
4M x 4 bit fast page mode CMOS DRAM, 50ns, TTL interface |
Mosel Vitelic Corp |
1548 |
V53C516400A-50T |
4M x 4 bit fast page mode CMOS DRAM, 50ns, TTL interface |
Mosel Vitelic Corp |
1549 |
V53C516400A-60K |
4M x 4 bit fast page mode CMOS DRAM, 60ns, TTL interface |
Mosel Vitelic Corp |
1550 |
V53C516400A-60T |
4M x 4 bit fast page mode CMOS DRAM, 60ns, TTL interface |
Mosel Vitelic Corp |
1551 |
V62C5181024LL-70P |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1552 |
VDS6608A4A |
Synchronous DRAM(2M X 8 Bit X 4 Banks) |
A-DATA |
1553 |
VDS6608A4A-75 |
Synchronous DRAM(2M X 8 Bit X 4 Banks) |
A-DATA |
1554 |
VDS6616A4A |
Synchronous DRAM(1M X 16 Bit X 4 Banks) |
A-DATA |
1555 |
VDS6616A4A-5 |
Synchronous DRAM(1M X 16 Bit X 4 Banks) |
A-DATA |
1556 |
VDS6616A4A-6 |
Synchronous DRAM(1M X 16 Bit X 4 Banks) |
A-DATA |
1557 |
VDS6616A4A-7 |
Synchronous DRAM(1M X 16 Bit X 4 Banks) |
A-DATA |
1558 |
VDS6616A4A-7.5 |
133 Mhz LVTTL synchronous DRAM, 1 M x 16 bit x 4 banks |
A-DATA |
1559 |
VDS6616A4A-75 |
Synchronous DRAM(1M X 16 Bit X 4 Banks) |
A-DATA |
1560 |
VDS6632A4A |
Synchronous DRAM(512K X 32 Bit X 4 Banks) |
A-DATA |
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