| No. |
Part Name |
Description |
Manufacturer |
| 15391 |
2N5660 |
Silicon NPN Power Transistor, TO-66 (cont d) package |
Silicon Transistor Corporation |
| 15392 |
2N5661 |
Silicon NPN Power Transistor, TO-66 (cont d) package |
Silicon Transistor Corporation |
| 15393 |
2N5664 |
Silicon NPN Power Transistor, TO-66 (cont d) package |
Silicon Transistor Corporation |
| 15394 |
2N5665 |
Silicon NPN Power Transistor, TO-66 (cont d) package |
Silicon Transistor Corporation |
| 15395 |
2N5668 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 15396 |
2N5668 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 15397 |
2N5668 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 15398 |
2N5669 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 15399 |
2N5669 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 15400 |
2N5669 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 15401 |
2N5670 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 15402 |
2N5670 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 15403 |
2N5670 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 15404 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 15405 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 15406 |
2N5671 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
| 15407 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 15408 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 15409 |
2N5672 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
| 15410 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 15411 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 15412 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 15413 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 15414 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 15415 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 15416 |
2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor |
SemeLAB |
| 15417 |
2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor |
SemeLAB |
| 15418 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 15419 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 15420 |
2N5683 |
50A complementary silicon high-current, power PNP transistor 300W |
Motorola |
| | | |
