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Datasheets for FREQUEN

Datasheets found :: 15630
Page: | 516 | 517 | 518 | 519 | 520 | 521 |
No. Part Name Description Manufacturer
15571 W48S101-04 Spread Spectrum Motherboard Frequency Generator Cypress
15572 W48S101-04H Spread Spectrum Motherboard Frequency Generator Cypress
15573 W48S111 Spread Spectrum Desktop/Notebook System Frequency Generator Cypress
15574 W48S111-14 Spread Spectrum Desktop/Notebook System Frequency Generator Cypress
15575 W48S111-14G Spread Spectrum Desktop / Notebook System Frequency Generator Cypress
15576 W48S87 Desktop/Notebook Frequency Generator Cypress
15577 W48S87-72 Desktop/Notebook Frequency Generator Cypress
15578 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15579 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15580 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15581 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15582 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15583 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15584 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15585 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15586 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15587 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15588 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15589 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15590 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15591 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15592 W6NXD3L-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15593 W6PXD3O-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
15594 W83194BR-39A Step-less Frequency VIA PC133, Intel BX Clock Gen., with S.S.T. Winbond Electronics
15595 W83194BR-63S Step-less Frequency SiS 630S, Clock Gen., with S.S.T. Winbond Electronics
15596 WL800 2.5GHz Frequency Synthesiser Mitel Semiconductor
15597 WL800 2.5 GHz Frequency Synthesizer Zarlink Semiconductor
15598 WL800KG 2.5GHz Frequency Synthesiser Mitel Semiconductor
15599 WL800KGTP1R 2.5GHz Frequency Synthesiser Mitel Semiconductor
15600 WL800TP1R 4V; 2.5GHz frequency synthesiser Mitel Semiconductor


Datasheets found :: 15630
Page: | 516 | 517 | 518 | 519 | 520 | 521 |



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