| No. |
Part Name |
Description |
Manufacturer |
| 15601 |
Q62702-F1292 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 15602 |
Q62702-F1320 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 15603 |
Q62702-F1321 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 15604 |
Q62702-F1322 |
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) |
Siemens |
| 15605 |
Q62702-F1346 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 15606 |
Q62702-F1347 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents) |
Siemens |
| 15607 |
Q62702-F1359 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) |
Siemens |
| 15608 |
Q62702-F1432 |
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) |
Siemens |
| 15609 |
Q62702-F1576 |
NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 15610 |
Q62702-F774 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) |
Siemens |
| 15611 |
Q62702-F944 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
| 15612 |
Q62702G0077 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) |
Siemens |
| 15613 |
RAG115 |
15A 100V Silicon Rectifier Diode mounted in a special plastic case RAG |
IPRS Baneasa |
| 15614 |
RAG215 |
15A 200V Silicon Rectifier Diode mounted in a special plastic case RAG |
IPRS Baneasa |
| 15615 |
RDHA720SF06A1NK |
Radiation Hardened 60V 20A Solid-State Relay in a hermetic package. Configured as a single-pole-single-throw (SPST) normally open relay. |
International Rectifier |
| 15616 |
RDX |
Metal Oxide Resistors, Special Purpose, Special Purpose, High Voltage, Ratio Divider, Available with leads and/or mounting lugs in any required combination |
Vishay |
| 15617 |
RFPIC12F675F |
The rfPIC12F675 devices pack Microchip's powerful yet easy-to-program PICmicro� microcontroller architecture and a 434 MHz ASK/FSK RF transmitter into a 20-pin package. In addition, it features a 4 channel 10-bit Analog-to-Digital (A/D) co |
Microchip |
| 15618 |
RFPIC12F675K |
The rfPIC12F675 devices pack Microchip's powerful yet easy-to-program PICmicro� microcontroller architecture and a 315 MHz ASK/FSK RF transmitter into a 20-pin package. In addition, it features a 4 channel 10-bit Analog-to-Digital (A/D) co |
Microchip |
| 15619 |
RFS1006 |
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ... |
Anadigics Inc |
| 15620 |
RFSP2010 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... |
Anadigics Inc |
| 15621 |
RFSP2020 |
The RFS P2020 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... |
Anadigics Inc |
| 15622 |
RFSP5022 |
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ... |
Anadigics Inc |
| 15623 |
RFY220 |
N-Channel MOSFET in a Hermetically sealed to257AB Metal Package. |
SemeLAB |
| 15624 |
RTP315N10F7 |
Aerospace and defence N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package |
ST Microelectronics |
| 15625 |
S2803R3S |
Hi-Rel DC-DC Rad-Hard Single Converter in a S package with 3.3 Vout |
International Rectifier |
| 15626 |
S2805D |
10W Total Output Power 28 Vin +/-5 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04242 |
International Rectifier |
| 15627 |
S2805S |
Hi-Rel DC-DC Rad-Hard Single Converter in a S package with 5 Vout |
International Rectifier |
| 15628 |
S2807S |
10W Total Output Power 28 Vin +7 Vout Single DC-DC Radiation Hardened Converter in a S Package. |
International Rectifier |
| 15629 |
S2812D |
10W Total Output Power 28 Vin +/-12 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04243 |
International Rectifier |
| 15630 |
S2812S |
Hi-Rel DC-DC Rad-Hard Single Converter in a S package with 12 Vout |
International Rectifier |
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