| No. |
Part Name |
Description |
Manufacturer |
| 1561 |
NDL7911PD589 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With SC-PC connector. ITU-T wavelengh 1558.98 nm. Frequency 192.3 THz. |
NEC |
| 1562 |
NDL7912PC589 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With FC-PC connector. ITU-T wavelengh 1558.98 nm. Frequency 192.3 THz. |
NEC |
| 1563 |
NDL7912PD589 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With SC-PC connector. ITU-T wavelengh 1558.98 nm. Frequency 192.3 THz. |
NEC |
| 1564 |
NE1069L-4B |
1.6-2.3 GHz, 4 W, L,S-band power GaAs MESFET |
NEC |
| 1565 |
NEL2301 |
CLASS A 2.3 GHZ 15 VOLT POWER TRANSISTOR |
NEC |
| 1566 |
NEL2302 |
CLASS A 2.3 GHZ 15 VOLT POWER TRANSISTOR |
NEC |
| 1567 |
NEL2303 |
CLASS A 2.3 GHZ 15 VOLT POWER TRANSISTOR |
NEC |
| 1568 |
NES1723-10B |
1.7-2.3 GHz, 10 W, L,S-band power GaAs MESFET |
NEC |
| 1569 |
NES1723-20B |
1.7-2.3 GHz, 20 W, L,S-band power GaAs MESFET |
NEC |
| 1570 |
NEX2301 |
1.6 W, 2.3 GHz power oscillator transistor |
NEC |
| 1571 |
NEX2302 |
2 W, 2.3 GHz power oscillator transistor |
NEC |
| 1572 |
NEX2303 |
3.2 W, 2.3 GHz power oscillator transistor |
NEC |
| 1573 |
NOIV1SN2000A |
VITA 2000 2.3 Megapixel 92 FPS Global Shutter CMOS Image Sensor |
ON Semiconductor |
| 1574 |
NTE1367 |
Integrated Circuit Dual, Audio Power Amp, 2.3W to 5W (4.6W to 15W BTL) |
NTE Electronics |
| 1575 |
NTE1667 |
Integrated Circuit 2 Channel Amp, 2.3W/Ch (4.7W BTL) |
NTE Electronics |
| 1576 |
NTGD4161P |
Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 |
ON Semiconductor |
| 1577 |
NTMD2P01R2 |
Dual SO-8 Package -2.3 Amps, -16 Volts |
ON Semiconductor |
| 1578 |
NTMD2P01R2-D |
Power MOSFET -2.3 Amps, -16 Volts Dual SO-8 Package |
ON Semiconductor |
| 1579 |
NTMD3N08LR2 |
Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement -Mode SO-8 Dual Package |
ON Semiconductor |
| 1580 |
NTMD3N08LR2-D |
Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package |
ON Semiconductor |
| 1581 |
NTMS4704N |
Power MOSFET 30 V, 12.3 A, Single N-Channel, SO-8 |
ON Semiconductor |
| 1582 |
NVMFS5830NL |
Power MOSFET 40V 185A 2.3 mOhm Single N-Channel SO-8FL Logic Level |
ON Semiconductor |
| 1583 |
NX8560LJ589-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. FC-UPC connector. |
NEC |
| 1584 |
NX8560LJ589-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1559.98 nm. Frequency 192.30 THz. SC-UPC connector. |
NEC |
| 1585 |
NX8560SJ585-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1558.578 nm. Frequency 192.35 THz. FC-UPC connector. |
NEC |
| 1586 |
NX8560SJ585-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1558.578 nm. Frequency 192.35 THz. SC-UPC connector. |
NEC |
| 1587 |
NX8560SJ589-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. FC-UPC connector. |
NEC |
| 1588 |
NX8560SJ589-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1558.983 nm. Frequency 192.30 THz. SC-UPC connector. |
NEC |
| 1589 |
NX8562LB589-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1558.98 nm. Frequency 192.30 THz. Anode ground. FC-PC connector. |
NEC |
| 1590 |
NX8562LB6023-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1602.31 nm. Frequency 187.10 THz. Anode ground. FC-PC connector. |
NEC |
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