No. |
Part Name |
Description |
Manufacturer |
1561 |
SC260B3 |
Triac. Bidirectional triode thyristor. 25A RMS. Repetitive peak off-state voltage 200 V. |
Motorola |
1562 |
SC260D |
Triac. Bidirectional triode thyristor. 25A RMS. Repetitive peak off-state voltage 400 V. |
Motorola |
1563 |
SC260D3 |
Triac. Bidirectional triode thyristor. 25A RMS. Repetitive peak off-state voltage 400 V. |
Motorola |
1564 |
SC260M |
Triac. Bidirectional triode thyristor. 25A RMS. Repetitive peak off-state voltage 600 V. |
Motorola |
1565 |
SC260M3 |
Triac. Bidirectional triode thyristor. 25A RMS. Repetitive peak off-state voltage 600 V. |
Motorola |
1566 |
SC261B |
Triac. Bidirectional triode thyristor. 25A RMS. Repetitive peak off-state voltage 200 V. |
Motorola |
1567 |
SC261D |
Triac. Bidirectional triode thyristor. 25A RMS. Repetitive peak off-state voltage 400 V. |
Motorola |
1568 |
SC261M |
Triac. Bidirectional triode thyristor. 25A RMS. Repetitive peak off-state voltage 600 V. |
Motorola |
1569 |
T2300A |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 100 V. |
General Electric Solid State |
1570 |
T2300B |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 200 V. |
General Electric Solid State |
1571 |
T2300D |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 400 V. |
General Electric Solid State |
1572 |
T2300F |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 50 V. |
General Electric Solid State |
1573 |
T2300M |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 600 V. |
General Electric Solid State |
1574 |
T2300N |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 800 V. |
General Electric Solid State |
1575 |
T2301A |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 100 V. |
General Electric Solid State |
1576 |
T2301B |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 200 V. |
General Electric Solid State |
1577 |
T2301D |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 400 V. |
General Electric Solid State |
1578 |
T2301F |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 50 V. |
General Electric Solid State |
1579 |
T2301M |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 600 V. |
General Electric Solid State |
1580 |
T2301N |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 800 V. |
General Electric Solid State |
1581 |
T2302A |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 100 V. |
General Electric Solid State |
1582 |
T2302B |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V. |
General Electric Solid State |
1583 |
T2302D |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 400 V. |
General Electric Solid State |
1584 |
T2302F |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 50 V. |
General Electric Solid State |
1585 |
T2302M |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 600 V. |
General Electric Solid State |
1586 |
T2302N |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 800 V. |
General Electric Solid State |
1587 |
T2322B |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V. |
General Electric Solid State |
1588 |
T2500B |
High voltage, 6-A silicon triac. Vdrm 200 V. |
General Electric Solid State |
1589 |
T2500D |
High voltage, 6-A silicon triac. Vdrm 400 V. |
General Electric Solid State |
1590 |
T2500M |
High voltage, 6-A silicon triac. Vdrm 600 V. |
General Electric Solid State |
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