| No. |
Part Name |
Description |
Manufacturer |
| 1561 |
2N3792 |
SILICON PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 1562 |
2N3878 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 1563 |
2N3879 |
High speed, epitaxial collector silicon N-P-N planar transistor. |
General Electric Solid State |
| 1564 |
2N3902 |
HIGH VOLTAGE NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 1565 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1566 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1567 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 1568 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 1569 |
2N4032 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
| 1570 |
2N4033 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
| 1571 |
2N4036 |
PNP SILICON PLANAR TRANSISTOR |
Boca Semiconductor Corporation |
| 1572 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1573 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1574 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1575 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1576 |
2N4231 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 1577 |
2N4231A |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 1578 |
2N4232A |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 1579 |
2N4233A |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 1580 |
2N4234 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
| 1581 |
2N4235 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
| 1582 |
2N4236 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
| 1583 |
2N4237 |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1584 |
2N4238 |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1585 |
2N4239 |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1586 |
2N4240 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 1587 |
2N4347 |
HIGH-POWER INDUSTRIAL TRANSISTORS |
Boca Semiconductor Corporation |
| 1588 |
2N4398 |
PNP SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 1589 |
2N4399 |
PNP SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 1590 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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