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Datasheets for DEP

Datasheets found :: 1596
Page: | 49 | 50 | 51 | 52 | 53 | 54 |
No. Part Name Description Manufacturer
1561 TVP5158IPNP Four-Channel NTSC/PAL Video Decoder With Independent Scalers, Noise Reduction, Auto Contrast, and Fl 128-HTQFP -40 to 85 Texas Instruments
1562 TVP5158IPNPR Four-Channel NTSC/PAL Video Decoder With Independent Scalers, Noise Reduction, Auto Contrast, and Fl 128-HTQFP -40 to 85 Texas Instruments
1563 TVP5158PNP Four-Channel NTSC/PAL Video Decoder With Independent Scalers, Noise Reduction, Auto Contrast, and Fl 128-HTQFP 0 to 70 Texas Instruments
1564 TVP5158PNPR Four-Channel NTSC/PAL Video Decoder With Independent Scalers, Noise Reduction, Auto Contrast, and Fl 128-HTQFP 0 to 70 Texas Instruments
1565 TYPE TE Aluminum Capacitors, Littl-lytic®, Electrolytics, Dependable performance in industrial and electronic equipment with either transistor or modified electron-tube circuits Vishay
1566 TZ5911CY N-channel depletion-mode dual D-MOS FET Topaz Semiconductor
1567 TZ5911HD N-channel depletion-mode dual D-MOS FET Topaz Semiconductor
1568 UA857D Counter time circuit, 4 independent channels, maximum clock frequency 4 MHz, possibly equivalent Z80-CTC RFT
1569 UB857D Counter time circuit, 4 independent channels, maximum clock frequency 2.5 MHz, possibly equivalent Z80CTC RFT
1570 UCC27322MDEP Enhanced Product Single 9-A High Speed Low-Side MOSFET Driver With Enable 8-SOIC -55 to 125 Texas Instruments
1571 VB857D Couter timer circuit, 4 independent channels, max. clock frequency 2.5 MHz, extended temperature range, possibly equivalent Z80-CTC/PE RFT
1572 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1573 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1574 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1575 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1576 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1577 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1578 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1579 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1580 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1581 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1582 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1583 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1584 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1585 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1586 W6NXD3L-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1587 W6PXD3O-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
1588 WK650 60a Vapour-deposited photoconductive cell Tesla Elektronicke
1589 WK650 77 Vapour-deposited photoconductive cell Tesla Elektronicke
1590 XR68C681 Dual UART with Two Fully Independent Full Duplex Asynchronous Communications Channels Exar


Datasheets found :: 1596
Page: | 49 | 50 | 51 | 52 | 53 | 54 |



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