No. |
Part Name |
Description |
Manufacturer |
1561 |
TVP5158IPNP |
Four-Channel NTSC/PAL Video Decoder With Independent Scalers, Noise Reduction, Auto Contrast, and Fl 128-HTQFP -40 to 85 |
Texas Instruments |
1562 |
TVP5158IPNPR |
Four-Channel NTSC/PAL Video Decoder With Independent Scalers, Noise Reduction, Auto Contrast, and Fl 128-HTQFP -40 to 85 |
Texas Instruments |
1563 |
TVP5158PNP |
Four-Channel NTSC/PAL Video Decoder With Independent Scalers, Noise Reduction, Auto Contrast, and Fl 128-HTQFP 0 to 70 |
Texas Instruments |
1564 |
TVP5158PNPR |
Four-Channel NTSC/PAL Video Decoder With Independent Scalers, Noise Reduction, Auto Contrast, and Fl 128-HTQFP 0 to 70 |
Texas Instruments |
1565 |
TYPE TE |
Aluminum Capacitors, Littl-lytic®, Electrolytics, Dependable performance in industrial and electronic equipment with either transistor or modified electron-tube circuits |
Vishay |
1566 |
TZ5911CY |
N-channel depletion-mode dual D-MOS FET |
Topaz Semiconductor |
1567 |
TZ5911HD |
N-channel depletion-mode dual D-MOS FET |
Topaz Semiconductor |
1568 |
UA857D |
Counter time circuit, 4 independent channels, maximum clock frequency 4 MHz, possibly equivalent Z80-CTC |
RFT |
1569 |
UB857D |
Counter time circuit, 4 independent channels, maximum clock frequency 2.5 MHz, possibly equivalent Z80CTC |
RFT |
1570 |
UCC27322MDEP |
Enhanced Product Single 9-A High Speed Low-Side MOSFET Driver With Enable 8-SOIC -55 to 125 |
Texas Instruments |
1571 |
VB857D |
Couter timer circuit, 4 independent channels, max. clock frequency 2.5 MHz, extended temperature range, possibly equivalent Z80-CTC/PE |
RFT |
1572 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1573 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1574 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1575 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1576 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1577 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1578 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1579 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1580 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1581 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1582 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1583 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1584 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1585 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1586 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1587 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
1588 |
WK650 60a |
Vapour-deposited photoconductive cell |
Tesla Elektronicke |
1589 |
WK650 77 |
Vapour-deposited photoconductive cell |
Tesla Elektronicke |
1590 |
XR68C681 |
Dual UART with Two Fully Independent Full Duplex Asynchronous Communications Channels |
Exar |
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