| No. |
Part Name |
Description |
Manufacturer |
| 1561 |
P4KE100 |
81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1562 |
P4KE100A |
85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1563 |
P4KE100A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 95.0 V, Vbr(max) = 105 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1564 |
P4KE100C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 90.0 V, Vbr(max) = 110 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1565 |
P4KE100CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 95.0 V, Vbr(max) = 105 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1566 |
P4KE110 |
89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1567 |
P4KE110A |
94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1568 |
P4KE110A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 105 V, Vbr(max) = 116 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1569 |
P4KE110C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 99.0 V, Vbr(max) = 121 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1570 |
P4KE110CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 105 V, Vbr(max) = 116 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1571 |
P4KE120 |
97.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1572 |
P4KE120A |
102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1573 |
P4KE120A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 114 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1574 |
P4KE120C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 108 V, Vbr(max) = 132 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1575 |
P4KE120CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 114 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1576 |
P4KE130 |
105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1577 |
P4KE130A |
111.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1578 |
P4KE130A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1579 |
P4KE130C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 117 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1580 |
P4KE130CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1581 |
P4KE150 |
121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1582 |
P4KE150A |
128.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1583 |
P4KE150A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1584 |
P4KE150C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 135 V, Vbr(max) = 165 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1585 |
P4KE150CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1586 |
P4KE160 |
130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1587 |
P4KE160A |
136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1588 |
P4KE160A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1589 |
P4KE160C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 144 V, Vbr(max) = 176 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1590 |
P4KE160CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
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