No. |
Part Name |
Description |
Manufacturer |
15631 |
2N6426-D |
Darlington Transistors NPN Silicon |
ON Semiconductor |
15632 |
2N6426RLRA |
Small Signal Darlington NPN |
ON Semiconductor |
15633 |
2N6427 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
15634 |
2N6427 |
Small Signal Darlington NPN |
ON Semiconductor |
15635 |
2N6427 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
Samsung Electronic |
15636 |
2N6427RLRA |
Small Signal Darlington NPN |
ON Semiconductor |
15637 |
2N6428 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
15638 |
2N6428 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
15639 |
2N6428A |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
15640 |
2N6430 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
15641 |
2N6431 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
15642 |
2N6432 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
15643 |
2N6433 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
15644 |
2N6436 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
15645 |
2N6436A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
15646 |
2N6437 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
15647 |
2N6437 |
POWER TRANSISTORS PNP SILICON |
ON Semiconductor |
15648 |
2N6437-D |
High-Power PNP Silicon Transistors |
ON Semiconductor |
15649 |
2N6437A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
15650 |
2N6438 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
15651 |
2N6438 |
POWER TRANSISTORS PNP SILICON |
ON Semiconductor |
15652 |
2N6438A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
15653 |
2N6439 |
60 W,NPN silicon RF power transistor |
MA-Com |
15654 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
15655 |
2N6439 |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Motorola |
15656 |
2N6449 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
15657 |
2N6449 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
15658 |
2N6449 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
15659 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
15660 |
2N6450 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
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