| No. |
Part Name |
Description |
Manufacturer |
| 15661 |
K210 |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 15662 |
K214 |
Nom zener voltage:2.4V; 250mW; measured from 1000-3000Hz; low level zener diode, very low voltage, low leakage |
Knox Semiconductor Inc |
| 15663 |
K214 |
Nom zener voltage:2.4V; 250mW; measured from 1000-3000Hz; low level zener diode, very low voltage, low leakage |
Knox Semiconductor Inc |
| 15664 |
K240 |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 15665 |
K270 |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 15666 |
K300 |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 15667 |
K330 |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 15668 |
K360 |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 15669 |
K390 |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 15670 |
K4040R |
40A 400V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 15671 |
K430 |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 15672 |
K470 |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 15673 |
K4E660412E, K4E640412E |
16M x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 15674 |
K4E660412E, K4E640412E |
16M x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 15675 |
K4E660812E, K4E640812E |
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 15676 |
K4E660812E, K4E640812E |
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 15677 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 15678 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 15679 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 15680 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 15681 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 15682 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 15683 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 15684 |
K4F160412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 15685 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 15686 |
K4F160412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 15687 |
K4F170411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 15688 |
K4F170411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 15689 |
K4F170411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 15690 |
K4F170411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
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