| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
IRF152 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 33A |
Siliconix |
| 1592 |
IRF152R |
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 1593 |
IRF153 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
| 1594 |
IRF3710ZSTRL |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 1595 |
IRF510 |
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 1596 |
IRF510 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 1597 |
IRF510 |
N-channel power MOSFET, 100V, 5.6A |
Harris Semiconductor |
| 1598 |
IRF510 |
5.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFET |
Intersil |
| 1599 |
IRF510 |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 1600 |
IRF510 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 4A |
Siliconix |
| 1601 |
IRF510F |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 1602 |
IRF510G |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 1603 |
IRF512 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
| 1604 |
IRF512 |
N-channel power MOSFET, 100V, 4.9A |
Harris Semiconductor |
| 1605 |
IRF512 |
Trans MOSFET N-CH 100V 3.5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 1606 |
IRF512 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 3.5A |
Siliconix |
| 1607 |
IRF520 |
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Features |
Fairchild Semiconductor |
| 1608 |
IRF520 |
9.2A/ 100V/ 0.270 Ohm/ N-Channel Power MOSFET |
Intersil |
| 1609 |
IRF520 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 1610 |
IRF520 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 8A |
Siliconix |
| 1611 |
IRF520 |
N-CHANNEL 100V - 0.115 OHM - 10A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
| 1612 |
IRF520CF |
Trans MOSFET N-CH 100V 9.7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 1613 |
IRF520NL |
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A |
International Rectifier |
| 1614 |
IRF520V |
Trans MOSFET N-CH 100V 9.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 1615 |
IRF5210S |
Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| 1616 |
IRF522 |
Trans MOSFET N-CH 100V 7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 1617 |
IRF522 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 7A |
Siliconix |
| 1618 |
IRF522R |
Trans MOSFET N-CH 100V 7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 1619 |
IRF530 |
14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 1620 |
IRF530 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| | | |
