| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
2N3486 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 1592 |
2N3486A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 1593 |
2N3494 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 1594 |
2N3495 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 1595 |
2N3496 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 1596 |
2N3497 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 1597 |
2N3501CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1598 |
2N350A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 1599 |
2N3510 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 1600 |
2N3511 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 1601 |
2N351A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 1602 |
2N3544 |
NPN silicon transistor for VHF and UHF oscillator applications |
Motorola |
| 1603 |
2N3553 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 1604 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 1605 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 1606 |
2N3632 |
Silicon NPN overlay epitaxial planar transistor for VHF transmitting applications |
ICCE |
| 1607 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 1608 |
2N3637CSM |
PNP SILICON TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1609 |
2N3647 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 1610 |
2N3648 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 1611 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 1612 |
2N3700DCSM |
HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1613 |
2N3713 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1614 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1615 |
2N3714 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1616 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1617 |
2N3715 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1618 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1619 |
2N3716 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1620 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
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