| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
GT60M302 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 1592 |
GT60M303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 1593 |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation |
TOSHIBA |
| 1594 |
GT80J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 1595 |
GT80J101A |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 1596 |
GT8J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1597 |
GT8J102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1598 |
GT8J102SM |
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 1599 |
GT8Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1600 |
GT8Q102 |
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 1601 |
GT8Q102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1602 |
GT8Q102SM |
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 1603 |
H5N0301SM |
Silicon N Channel Power MOS FET Power Switching |
Hitachi Semiconductor |
| 1604 |
H5N3003 |
Silicon N Channel MOS FET High Speed Power Switching |
Renesas |
| 1605 |
H5P0301SM |
Silicon P Channel Power MOS FET Power Switching |
Hitachi Semiconductor |
| 1606 |
H7N0307L |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 1607 |
HAF1002 |
Silicon P Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
| 1608 |
HAF1002L |
Silicon P Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
| 1609 |
HAF1002S |
Silicon P Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
| 1610 |
HAF2007 |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
| 1611 |
HAF2007L |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
| 1612 |
HAF2007S |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
| 1613 |
HAF2011 |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
| 1614 |
HAF2011L |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
| 1615 |
HAF2011S |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
| 1616 |
HAT1016R |
Silicon P Channel Power MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 1617 |
HAT1020 |
Silicon P Channel Power MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 1618 |
HAT1020R |
Silicon P Channel Power MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 1619 |
HAT1021 |
Silicon P Channel Power MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 1620 |
HAT1021R |
Silicon P Channel Power MOS FET High Speed Power Switching |
Hitachi Semiconductor |
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