| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
ISO7341FCDWR |
Robust EMC, Low Power, Quad-Channel 3/1 Digital Isolator, Fail-Safe Low 16-SOIC -40 to 125 |
Texas Instruments |
| 1592 |
ISO7341FCQDWQ1 |
Automotive, Low Power, Quad-Channel 3/1 Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1593 |
ISO7341FCQDWRQ1 |
Automotive, Low Power, Quad-Channel 3/1 Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1594 |
ISO7342-Q1 |
Automotive, Low Power, Quad-Channel 2/2 Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1595 |
ISO7342CQDWQ1 |
Automotive, Low Power, Quad-Channel 2/2 Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1596 |
ISO7342CQDWRQ1 |
Automotive, Low Power, Quad-Channel 2/2 Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1597 |
ISO7342FC |
Robust EMC, Low Power, Quad-Channel 2/2 Digital Isolator, Fail-Safe Low 16-SOIC -40 to 125 |
Texas Instruments |
| 1598 |
ISO7342FCDW |
Robust EMC, Low Power, Quad-Channel 2/2 Digital Isolator, Fail-Safe Low 16-SOIC -40 to 125 |
Texas Instruments |
| 1599 |
ISO7342FCDWR |
Robust EMC, Low Power, Quad-Channel 2/2 Digital Isolator, Fail-Safe Low 16-SOIC -40 to 125 |
Texas Instruments |
| 1600 |
ISO7342FCQDWQ1 |
Automotive, Low Power, Quad-Channel 2/2 Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1601 |
ISO7342FCQDWRQ1 |
Automotive, Low Power, Quad-Channel 2/2 Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1602 |
K4E641612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 1603 |
K4E641612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 1604 |
K4E641612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 1605 |
K4E661612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 1606 |
K4E661612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 1607 |
K4E661612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 1608 |
K4F641612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 1609 |
K4F641612B-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 1610 |
K4F641612B-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 1611 |
K4F641612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 1612 |
K4F641612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 1613 |
K4F661612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 1614 |
K4F661612B-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 1615 |
K4F661612B-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 1616 |
K4F661612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 1617 |
K4F661612C-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 1618 |
K4F661612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 1619 |
KM416V4000BS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 1620 |
KM416V4000BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
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