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Datasheets for 0.8

Datasheets found :: 2480
Page: | 50 | 51 | 52 | 53 | 54 | 55 | 56 | 57 | 58 |
No. Part Name Description Manufacturer
1591 MAX6737XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1592 MAX6740XKTED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1593 MAX6740XKWED3-T Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1594 MAX6740XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1595 MAX6741XKTED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1596 MAX6741XKWED3-T Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1597 MAX6741XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1598 MAX6743XKTED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1599 MAX6743XKWED3-T Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1600 MAX6743XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1601 MAX6744XKTED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1602 MAX6744XKWED3-T Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1603 MAX6744XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1604 MB10S-G Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=0.8A Comchip Technology
1605 MB2S-G Bridge Rectifiers, VRRM=200V, VDC=200V, I(AV)=0.8A Comchip Technology
1606 MB4S-G Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=0.8A Comchip Technology
1607 MB6S-G Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=0.8A Comchip Technology
1608 MB8S-G Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=0.8A Comchip Technology
1609 MCK100-6 400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage SemiWell Semiconductor
1610 MCK100-8 600V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage SemiWell Semiconductor
1611 MCR08BT1 SCR 0.8 AMPERE RMS 200 thru 600 Volts Motorola
1612 MCR08DT1 Silicon Controlled Rectifier 0.8 ampere RMS, 400V Motorola
1613 MCR08MT1 Silicon Controlled Rectifier 0.8 ampere RMS, 600V Motorola
1614 MCR100 0.8A SCR Micro Electronics
1615 MCR100-4 0.8A SILICON CONTROLLED RECTIFIERS Micro Electronics
1616 MCR100-4A 0.8A SILICON CONTROLLED RECTIFIERS Micro Electronics
1617 MCR100-6 0.8A SILICON CONTROLLED RECTIFIERS Micro Electronics
1618 MCR100-6 400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage SemiWell Semiconductor
1619 MCR100-6A 0.8A SILICON CONTROLLED RECTIFIERS Micro Electronics
1620 MCR100-8 0.8A SILICON CONTROLLED RECTIFIERS Micro Electronics


Datasheets found :: 2480
Page: | 50 | 51 | 52 | 53 | 54 | 55 | 56 | 57 | 58 |



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