No. |
Part Name |
Description |
Manufacturer |
1591 |
MAX6737XKZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1592 |
MAX6740XKTED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1593 |
MAX6740XKWED3-T |
Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1594 |
MAX6740XKZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1595 |
MAX6741XKTED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1596 |
MAX6741XKWED3-T |
Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1597 |
MAX6741XKZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1598 |
MAX6743XKTED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1599 |
MAX6743XKWED3-T |
Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1600 |
MAX6743XKZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1601 |
MAX6744XKTED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1602 |
MAX6744XKWED3-T |
Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1603 |
MAX6744XKZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1604 |
MB10S-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=0.8A |
Comchip Technology |
1605 |
MB2S-G |
Bridge Rectifiers, VRRM=200V, VDC=200V, I(AV)=0.8A |
Comchip Technology |
1606 |
MB4S-G |
Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=0.8A |
Comchip Technology |
1607 |
MB6S-G |
Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=0.8A |
Comchip Technology |
1608 |
MB8S-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=0.8A |
Comchip Technology |
1609 |
MCK100-6 |
400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
1610 |
MCK100-8 |
600V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
1611 |
MCR08BT1 |
SCR 0.8 AMPERE RMS 200 thru 600 Volts |
Motorola |
1612 |
MCR08DT1 |
Silicon Controlled Rectifier 0.8 ampere RMS, 400V |
Motorola |
1613 |
MCR08MT1 |
Silicon Controlled Rectifier 0.8 ampere RMS, 600V |
Motorola |
1614 |
MCR100 |
0.8A SCR |
Micro Electronics |
1615 |
MCR100-4 |
0.8A SILICON CONTROLLED RECTIFIERS |
Micro Electronics |
1616 |
MCR100-4A |
0.8A SILICON CONTROLLED RECTIFIERS |
Micro Electronics |
1617 |
MCR100-6 |
0.8A SILICON CONTROLLED RECTIFIERS |
Micro Electronics |
1618 |
MCR100-6 |
400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
1619 |
MCR100-6A |
0.8A SILICON CONTROLLED RECTIFIERS |
Micro Electronics |
1620 |
MCR100-8 |
0.8A SILICON CONTROLLED RECTIFIERS |
Micro Electronics |
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