No. |
Part Name |
Description |
Manufacturer |
1591 |
PD45128163G5-A80SU-9JF |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
Elpida Memory |
1592 |
PD45128163G5-A80T-9JF |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
Elpida Memory |
1593 |
PD45128168G5-A10-9JF |
128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit |
Elpida Memory |
1594 |
PD45128168G5-A75-9JF |
128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit |
Elpida Memory |
1595 |
PD45128168G5-A75A-9JF |
128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit |
Elpida Memory |
1596 |
PD45128168G5-A80-9JF |
128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit |
Elpida Memory |
1597 |
SCH2816 |
Nch+SBD |
SANYO |
1598 |
STC62WV12816 |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
1599 |
STC62WV12816AC |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
1600 |
STC62WV12816AI |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
1601 |
STC62WV12816DC |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
1602 |
STC62WV12816DI |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
1603 |
STC62WV12816EC |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
1604 |
STC62WV12816EI |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
1605 |
T4312816A |
8M x 16 SDRAM |
Taiwan Memory Technology |
1606 |
T4312816A-10S |
8M x 16 SDRAM |
Taiwan Memory Technology |
1607 |
T4312816A-10S |
100MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
1608 |
T4312816A-6S |
8M x 16 SDRAM |
Taiwan Memory Technology |
1609 |
T4312816A-6S |
166MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
1610 |
T4312816A-7.5S |
8M x 16 SDRAM���� |
Taiwan Memory Technology |
1611 |
T4312816A-7.5S |
133MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
1612 |
T4312816A-7S |
8M x 16 SDRAM |
Taiwan Memory Technology |
1613 |
T4312816A-7S |
143MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
1614 |
T4312816A-8S |
8M x 16 SDRAM |
Taiwan Memory Technology |
1615 |
T4312816A-8S |
125MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
1616 |
TM128160CKFWG |
SPECIFICATION FOR LCD MODULE |
etc |
1617 |
TMS428160 |
1 048 576-Word By 16-Bit High-Speed DRAMS |
Texas Instruments |
1618 |
TMS428169A |
1 048 576-WORD BY 16-BIT EXTENDED DATA OUT DRAM |
Texas Instruments |
1619 |
TMS428169A-60DGE |
1 048 576-WORD BY 16-BIT EXTENDED DATA OUT DRAM |
Texas Instruments |
1620 |
TMS428169A-60DGER |
1 048 576-WORD BY 16-BIT EXTENDED DATA OUT DRAM |
Texas Instruments |
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