| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1592 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1593 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1594 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1595 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1596 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1597 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1598 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1599 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1600 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1601 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1602 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1603 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1604 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1605 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1606 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1607 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1608 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1609 |
3N216 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1610 |
3N217 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1611 |
3SK121 |
GaAs N-Channel Dual gate MES type |
TOSHIBA |
| 1612 |
3SK147 |
GaAs N-Channel Dual-Gate MES FET |
SONY |
| 1613 |
3SK148 |
GaAs N-Channel Dual-Gate MES FET |
SONY |
| 1614 |
3SK149 |
GaAs N-Channel Dual-Gate MES FET |
SONY |
| 1615 |
3SK165 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 1616 |
3SK165A |
GaAs N-channel Dual Gate MES FET |
SONY |
| 1617 |
3SK165A-0 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 1618 |
3SK165A-1 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 1619 |
3SK166 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 1620 |
3SK166A |
GaAs N-channel Dual Gate MES FET |
SONY |
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