No. |
Part Name |
Description |
Manufacturer |
1591 |
M470T6554CZ3-CLCC |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
1592 |
M470T6554CZ3-CLCC |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
1593 |
M470T6554CZ3-CLD5 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
1594 |
M470T6554CZ3-CLD5 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
1595 |
M470T6554CZ3-CLE6 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
1596 |
M470T6554CZ3-CLE6 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
1597 |
M470T6554CZ3-CLE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
1598 |
M470T6554CZ3-CLE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
1599 |
NT128D64S88A2GM-75B |
128Mb unbuffered DDR SO-DIMM module based on 16Mx8 SDRAM |
NANYA |
1600 |
NT128D64S88A2GM-7K |
128Mb unbuffered DDR SO-DIMM module based on 16Mx8 SDRAM |
NANYA |
1601 |
NT128D64S88A2GM-8B |
128Mb unbuffered DDR SO-DIMM module based on 16Mx8 SDRAM |
NANYA |
1602 |
NT128S64VH4A0GM0-75B |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
1603 |
NT128S64VH4A0GM0-7K |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
1604 |
NT128S64VH4A0GM0-8B |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
1605 |
NT128S64VH8C0GM-75B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
1606 |
NT128S64VH8C0GM-7K |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
1607 |
NT128S64VH8C0GM-8B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
1608 |
NT256D64S88A2GM-75B |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM |
NANYA |
1609 |
NT256D64S88A2GM-7K |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM |
NANYA |
1610 |
NT256D64S88A2GM-8B |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM |
NANYA |
1611 |
OZ998 |
Intelligent Manager Smart Multi-DIMM Selector |
etc |
1612 |
OZ998S |
Intelligent Manager Smart Multi-DIMM Selector |
etc |
1613 |
OZ998S |
Intelligent manager smart multi-DIMM selector |
O2Micro |
1614 |
P13B16212A |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
1615 |
P13B16212V |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
1616 |
PC133 |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
1617 |
SSTU32864EC |
1.8 V configurable registered buffer for DDR2 RDIMM applications |
NXP Semiconductors |
1618 |
SSTU32864EC |
1.8 V configurable registered buffer for DDR2 RDIMM applications |
Philips |
1619 |
SSTU32864EC |
SSTU32864; 1.8 V configurable registered buffer for DDR2 RDIMM applications |
Philips |
1620 |
SSTU32864EC/G |
SSTU32864; 1.8 V configurable registered buffer for DDR2 RDIMM applications |
Philips |
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