| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
2SC864 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1592 |
2SC900 |
LOW FREQUENCY, LOW NOISE AMPLIFIER |
USHA India LTD |
| 1593 |
2SC941 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1594 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 1595 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 1596 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 1597 |
2SC942 |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 1598 |
2SC942TM |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 1599 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 1600 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 1601 |
2SC982 |
Silicon NPN epitaxial planar transistor, Printer Drive, Core Drive and LED drive, low frequency amplifier applications |
TOSHIBA |
| 1602 |
2SC982 |
NPN EPITAXIAL TYPE (PRINTER DRIVE/ CORE DRIVER AND LED DRIVE/ LOW FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1603 |
2SC982TM |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications |
TOSHIBA |
| 1604 |
2SC983 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1605 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 1606 |
2SC991 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1607 |
2SC992 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1608 |
2SC995 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1609 |
2SC996 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1610 |
2SC997 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1611 |
2SD0592A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1612 |
2SD0601A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1613 |
2SD0602A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1614 |
2SD0638 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1615 |
2SD0662 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1616 |
2SD0662B |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1617 |
2SD0814 |
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
Panasonic |
| 1618 |
2SD0814A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1619 |
2SD0874 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1620 |
2SD0874A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| | | |
