| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
2N651 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1592 |
2N651A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1593 |
2N652 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1594 |
2N652A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1595 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1596 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1597 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1598 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1599 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1600 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1601 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1602 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1603 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1604 |
2SA1223 |
PNP silicon high frequency transistor (This datasheet of the NE88935 is also the datasheet of 2SA1223, see the Electrical Characteristics table) |
NEC |
| 1605 |
2SA1223 |
PNP silicon high frequency transistor (This datasheet of the NE88935 is also the datasheet of 2SA1223, see the Electrical Characteristics table) |
NEC |
| 1606 |
2SA1223 |
PNP silicon high frequency transistor (This datasheet of the NE88935 is also the datasheet of 2SA1223, see the Electrical Characteristics table) |
NEC |
| 1607 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 1608 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 1609 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 1610 |
2SA1228 |
PNP silicon high frequency transistor (This datasheet of NE88912 is also the datasheet of 2SA1228, see the Electrical Characteristics table) |
NEC |
| 1611 |
2SA1228 |
PNP silicon high frequency transistor (This datasheet of NE88912 is also the datasheet of 2SA1228, see the Electrical Characteristics table) |
NEC |
| 1612 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
| 1613 |
2SA1349 |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL |
TOSHIBA |
| 1614 |
2SA1424 |
PNP silicon high frequency transistor (This datasheet of NE88933 is also the datasheet of 2SA1424, see the Electrical Characteristics table) |
NEC |
| 1615 |
2SA1424 |
PNP silicon high frequency transistor (This datasheet of NE88933 is also the datasheet of 2SA1424, see the Electrical Characteristics table) |
NEC |
| 1616 |
2SC1252 |
NPN medium power UHF-VHF transistor (This datasheet of NE74114 is also the datasheet of 2SC1252, see the Electrical Characteristics table) |
NEC |
| 1617 |
2SC1252 |
NPN medium power UHF-VHF transistor (This datasheet of NE74114 is also the datasheet of 2SC1252, see the Electrical Characteristics table) |
NEC |
| 1618 |
2SC1260 |
NPN silicon microwave transistor (This datasheet of NE87112 is also the datasheet of 2SC1260, see the Electrical Characteristics table) |
NEC |
| 1619 |
2SC1260 |
NPN silicon microwave transistor (This datasheet of NE87112 is also the datasheet of 2SC1260, see the Electrical Characteristics table) |
NEC |
| 1620 |
2SC1365 |
NPN medium power UHF-VHF transistor (This datasheet of NE74113 is also the datasheet of 2SC1365, see the Electrical Characteristics table) |
NEC |
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