| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
B2S |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE MINI SURFACE MOUNT BRIDGE RECTIFIER |
DC Components |
| 1592 |
B380C5000 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
| 1593 |
B40C5000 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
| 1594 |
B4S |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE MINI SURFACE MOUNT BRIDGE RECTIFIER |
DC Components |
| 1595 |
B6S |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE MINI SURFACE MOUNT BRIDGE RECTIFIER |
DC Components |
| 1596 |
B80C5000 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
| 1597 |
B8S |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE MINI SURFACE MOUNT BRIDGE RECTIFIER |
DC Components |
| 1598 |
BA157 |
TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER |
DC Components |
| 1599 |
BA158 |
TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER |
DC Components |
| 1600 |
BA159 |
TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER |
DC Components |
| 1601 |
BA1604/F |
Communications LSIs > ICs for telephone > Tone decoder |
ROHM |
| 1602 |
BA4112 |
FM-IF System IC for Communications Equipment |
ROHM |
| 1603 |
BA4116FV |
Communications LSIs > RF signal processing of portables application > IF for radio communication |
ROHM |
| 1604 |
BA6566/F/FP |
Communications LSIs > ICs for telephone > Speech network |
ROHM |
| 1605 |
BA6569AS/AFP |
Communications LSIs > ICs for telephone > Speech network |
ROHM |
| 1606 |
BA8201/F |
Communications LSIs > ICs for telephone > Simulated inductance |
ROHM |
| 1607 |
BA8206/F |
Communications LSIs > ICs for telephone > Tone ringer |
ROHM |
| 1608 |
BAR63-07L4 |
Diodes for switching applications up to 3GHz |
Infineon |
| 1609 |
BAR65-02L |
Diodes for switching applications up to 3GHz |
Infineon |
| 1610 |
BAR88-07L4 |
Diodes for switching applications up to 3GHz |
Infineon |
| 1611 |
BAR88-099L4 |
Diodes for switching applications up to 3GHz |
Infineon |
| 1612 |
BAR90-02L |
Diodes for switching applications up to 3GHz |
Infineon |
| 1613 |
BAR90-07L4 |
Diodes for switching applications up to 3GHz |
Infineon |
| 1614 |
BAR90-099L4 |
Diodes for switching applications up to 3GHz |
Infineon |
| 1615 |
BAS116 |
Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) |
Siemens |
| 1616 |
BAS16S |
Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package) |
Siemens |
| 1617 |
BAS28W |
Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) |
Siemens |
| 1618 |
BAS78 |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
Siemens |
| 1619 |
BAS78A |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
Siemens |
| 1620 |
BAS78B |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
Siemens |
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