No. |
Part Name |
Description |
Manufacturer |
1591 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
1592 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1593 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
1594 |
2N6517 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1595 |
2N6517BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1596 |
2N6517CBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1597 |
2N6517CTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1598 |
2N6517TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1599 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
1600 |
2N6518 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1601 |
2N6518BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1602 |
2N6518TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1603 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
1604 |
2N6519 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1605 |
2N6519BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1606 |
2N6519TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1607 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
1608 |
2N6520 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1609 |
2N6520BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1610 |
2N6520TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1611 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
1612 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
ST Microelectronics |
1613 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1614 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1615 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1616 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1617 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1618 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1619 |
2N6594 |
12 Ampere 100W POWER PNP silicon transistor 40V |
Motorola |
1620 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
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