No. |
Part Name |
Description |
Manufacturer |
1591 |
2N930 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
1592 |
2N930 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
1593 |
2N930B |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1594 |
2N947 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1595 |
2N956 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1596 |
2N957 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1597 |
2N978 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1598 |
2N995 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1599 |
2N996 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1600 |
2N998 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
1601 |
2SA0683 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1602 |
2SA0684 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1603 |
2SA0719 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1604 |
2SA0720 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1605 |
2SA0720A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1606 |
2SA0777 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1607 |
2SA0838 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
1608 |
2SA0879 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1609 |
2SA0921 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1610 |
2SA1006 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
1611 |
2SA1006A |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
1612 |
2SA1006B |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
1613 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
1614 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
1615 |
2SA1018 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1616 |
2SA1021 |
Silicon PNP epitaxial transistor |
TOSHIBA |
1617 |
2SA1022 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
1618 |
2SA1034 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1619 |
2SA1035 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1620 |
2SA1090 |
Silicon PNP epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
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