| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1592 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1593 |
1S410 |
Diffused silicon rectifier 3A 100V |
Texas Instruments |
| 1594 |
1S410R |
Diffused silicon rectifier 3A 100V, reverse polarity |
Texas Instruments |
| 1595 |
1S411 |
Diffused silicon rectifier 3A 200V |
Texas Instruments |
| 1596 |
1S411R |
Diffused silicon rectifier 3A 200V, reverse polarity |
Texas Instruments |
| 1597 |
1S413 |
Diffused silicon rectifier 3A 400V |
Texas Instruments |
| 1598 |
1S413R |
Diffused silicon rectifier 3A 400V, reverse polarity |
Texas Instruments |
| 1599 |
1S415 |
Diffused silicon rectifier 3A 600V |
Texas Instruments |
| 1600 |
1S415R |
Diffused silicon rectifier 3A 600V, reverse polarity |
Texas Instruments |
| 1601 |
1S417 |
Diffused silicon rectifier 3A 800V |
Texas Instruments |
| 1602 |
1S417R |
Diffused silicon rectifier 3A 800V, reverse polarity |
Texas Instruments |
| 1603 |
1S419 |
Diffused silicon rectifier 3A 1000V |
Texas Instruments |
| 1604 |
1S419R |
Diffused silicon rectifier 3A 1000V, reverse polarity |
Texas Instruments |
| 1605 |
1S420 |
Diffused silicon rectifier 10A 100V |
Texas Instruments |
| 1606 |
1S420R |
Diffused silicon rectifier 10A 100V, reverse polarity |
Texas Instruments |
| 1607 |
1S421 |
Diffused silicon rectifier 10A 200V |
Texas Instruments |
| 1608 |
1S421R |
Diffused silicon rectifier 10A 200V, reverse polarity |
Texas Instruments |
| 1609 |
1S423 |
Diffused silicon rectifier 10A 400V |
Texas Instruments |
| 1610 |
1S423R |
Diffused silicon rectifier 10A 400V, reverse polarity |
Texas Instruments |
| 1611 |
1S425 |
Diffused silicon rectifier 10A 600V |
Texas Instruments |
| 1612 |
1S425R |
Diffused silicon rectifier 10A 600V, reverse polarity |
Texas Instruments |
| 1613 |
1S427 |
Diffused silicon rectifier 10A 800V |
Texas Instruments |
| 1614 |
1S427R |
Diffused silicon rectifier 10A 800V, reverse polarity |
Texas Instruments |
| 1615 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 1616 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 1617 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 1618 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1619 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1620 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| | | |
