| No. |
Part Name |
Description |
Manufacturer |
| 16081 |
2N5085 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
| 16082 |
2N5085 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
| 16083 |
2N5086 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 16084 |
2N5086 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE |
Continental Device India Limited |
| 16085 |
2N5086 |
Low Noise PNP Transistor |
FERRANTI |
| 16086 |
2N5086 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 16087 |
2N5086 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 16088 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 16089 |
2N5086 |
Silicon PNP Transistor |
Motorola |
| 16090 |
2N5086 |
PNP Transistor - Low level AMPS |
National Semiconductor |
| 16091 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 16092 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 16093 |
2N5087 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 16094 |
2N5087 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE |
Continental Device India Limited |
| 16095 |
2N5087 |
Low Noise PNP Transistor |
FERRANTI |
| 16096 |
2N5087 |
Low-Power General Purpose PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 16097 |
2N5087 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 16098 |
2N5087 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 16099 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 16100 |
2N5087 |
Silicon PNP Transistor |
Motorola |
| 16101 |
2N5087 |
PNP Transistor - Low level AMPS |
National Semiconductor |
| 16102 |
2N5087 |
PNP general purpose transistor |
Philips |
| 16103 |
2N5087 |
PNP Epitaxial Silicon Transistor |
Samsung Electronic |
| 16104 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 16105 |
2N5087-D |
Amplifier Transistor PNP Silicon |
ON Semiconductor |
| 16106 |
2N5088 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 16107 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
| 16108 |
2N5088 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 16109 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 16110 |
2N5088 |
Silicon NPN Transistor |
Motorola |
| | | |
