| No. |
Part Name |
Description |
Manufacturer |
| 16111 |
GC4531 |
Si High Voltage Switching / Attenuation NIP |
Microsemi |
| 16112 |
GC4532 |
Si High Voltage Switching / Attenuation NIP |
Microsemi |
| 16113 |
GC4533 |
Si High Voltage Switching / Attenuation NIP |
Microsemi |
| 16114 |
GD100-GE100-SERIES |
General information about the GD 100 and GE 100 series |
Siemens |
| 16115 |
GD125 |
Germanium PNP power transistor for 48V switch application and low frequency power amplifier |
RFT |
| 16116 |
GD90590 |
HIGH SPEED CLOCK WYNTHESIZER EVALUATION BOARD |
etc |
| 16117 |
GENINFO |
General Information for ESTA prop/ESTA dry Power Factor Correction Capacitors Low Voltage |
Vishay |
| 16118 |
GH2801R5S |
50W Total Output Power 28 Vin +1.5 Vout Single DC-DC Radiation Hardened Converter in a GH Package. |
International Rectifier |
| 16119 |
GH2801R8S |
50W Total Output Power 28 Vin +1.8 Vout Single DC-DC Radiation Hardened Converter in a GH Package. |
International Rectifier |
| 16120 |
GH2801S |
50W Total Output Power 28 Vin +1.0 Vout Single DC-DC Radiation Hardened Converter in a GH Package. |
International Rectifier |
| 16121 |
GH2802R5S |
50W Total Output Power 28 Vin +2.5 Vout Single DC-DC Radiation Hardened Converter in a GH Package. |
International Rectifier |
| 16122 |
GH2803R3S |
50W Total Output Power 28 Vin +3.3 Vout Single DC-DC Radiation Hardened Converter in a GH Package. DLA Number 5962-1021701 |
International Rectifier |
| 16123 |
GH2805S |
50W Total Output Power 28 Vin +5 Vout Single DC-DC Radiation Hardened Converter in a GH Package. DLA Number 5962-1021901 |
International Rectifier |
| 16124 |
GIGAPHY-LAB-KT |
Evaluation Kit for the Am79761 Device |
Advanced Micro Devices |
| 16125 |
GIGAPHY-SD |
GigaPHY-LAB-KT Gigabit Evaluation Board |
Advanced Micro Devices |
| 16126 |
GL1F20 |
Infrared Communication (IrDA1.0 Compatible) InfraredEmitting Diode |
SHARP |
| 16127 |
GL5ZJ302BOS |
DEVICE SPECIFICATION FOR Light Emitting Diode |
SHARP |
| 16128 |
GL5ZR302BOS |
DEVICE SPECIFICATION FOR Light Emitting Diode |
SHARP |
| 16129 |
GL5ZS302BOS |
DEVICE SPECIFICATION FOR Light Emitting Diode |
SHARP |
| 16130 |
GL5ZV302BOS |
DEVICE SPECIFICATION FOR Light Emitting Diode |
SHARP |
| 16131 |
GLOSSARY |
GLOSSARY from Silicon Systems Communication Product DATA BOOK 1994 |
Silicon Systems |
| 16132 |
GMS30C7201 |
60MHz operation frequency Low power consumption |
Hynix Semiconductor |
| 16133 |
GP1AQ36 |
High Temperature Operation Type OPIC Photointerrupter with Connector |
SHARP |
| 16134 |
GP1AQ36L |
High Temperature Operation Type OPIC Photointerrupter with Connector |
SHARP |
| 16135 |
GP1F37R1 |
Square type Optical Fiber Transmitter/Receiver Unit for 3V Operation and Double Speed |
SHARP |
| 16136 |
GP1F37T2 |
Square type Optical Fiber Transmitter/Receiver Unit for 3V Operation and Double Speed |
SHARP |
| 16137 |
GP1FA312RZ |
Square type Optical Fiber Transmitter/Receiver Unit for 3V Operation and Double Speed |
SHARP |
| 16138 |
GP1FA312TZ |
Square type Optical Fiber Transmitter/Receiver Unit for 3V Operation and Double Speed |
SHARP |
| 16139 |
GP1FA313RZ |
Square type Optical Fiber Transmitter/Receiver Unit for 3V Operation and Double Speed |
SHARP |
| 16140 |
GP1FA313TZ |
Square type Optical Fiber Transmitter/Receiver Unit for 3V Operation and Double Speed |
SHARP |
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