DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for ETAL

Datasheets found :: 17096
Page: | 534 | 535 | 536 | 537 | 538 | 539 | 540 | 541 | 542 |
No. Part Name Description Manufacturer
16111 SB35-45M DUAL SCHOTTKY BARRIER DIODE IN TO254 METAL PACKAGE FOR HI-REL APPLICATIONS SemeLAB
16112 SD1290 50MHz 12.5V 40W Gold Metallization NPN silicon RF Transistor SGS Thomson Microelectronics
16113 SD1317 UHF Small signal 4GHz very low noise, gold metallized NPN RF transistor SGS Thomson Microelectronics
16114 SD1331 UHF Small signal 6GHz, very low noise, gold metallized NPN RF transistor SGS Thomson Microelectronics
16115 SD1332 UHF Small signal 5.5GHz, very low noise, gold metallized NPN RF transistor SGS Thomson Microelectronics
16116 SD1333 UHF Small signal 5.5GHz, very low noise, gold metallized NPN RF transistor SGS Thomson Microelectronics
16117 SD1425 800-960MHz 30W 24V gold metallized NPN RF transistor, high linearity Class AB operation SGS Thomson Microelectronics
16118 SD1511-08 Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz SGS Thomson Microelectronics
16119 SD1524-1 Gold Metallized silicon NPN power RF transistor for IFF/DME applications SGS Thomson Microelectronics
16120 SD1526-01 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
16121 SD1526-08 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
16122 SD1527-08 Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications SGS Thomson Microelectronics
16123 SD1528-8 Gold Metallized NPN Power RF Transistor designed for IFF/DME and TACAN applications SGS Thomson Microelectronics
16124 SD1920-02 Gold metalliezed N-Channel MOS field-effect RF power transistor 50V, up to 200MHz 300W Class AB SGS Thomson Microelectronics
16125 SD1930 Gold metallized N-Channel MOS field-effect RF transistor 28V 400MHz 5W SGS Thomson Microelectronics
16126 SD4012 Gold metallized epitaxial silicon NPN planar RF transistor 3W SGS Thomson Microelectronics
16127 SDAB-15P STRAIGHT/METAL PCB D-SUB Hirose Electric
16128 SDAB-15P05 STRAIGHT/METAL PCB D-SUB Hirose Electric
16129 SDAB-15S STRAIGHT/METAL PCB D-SUB Hirose Electric
16130 SDAB-15S05 STRAIGHT/METAL PCB D-SUB Hirose Electric
16131 SDAB-25P STRAIGHT/METAL PCB D-SUB Hirose Electric
16132 SDAB-25P05 STRAIGHT/METAL PCB D-SUB Hirose Electric
16133 SDAB-25S STRAIGHT/METAL PCB D-SUB Hirose Electric
16134 SDAB-25S05 STRAIGHT/METAL PCB D-SUB Hirose Electric
16135 SDAB-37P STRAIGHT/METAL PCB D-SUB Hirose Electric
16136 SDAB-37P05 STRAIGHT/METAL PCB D-SUB Hirose Electric
16137 SDAB-37S STRAIGHT/METAL PCB D-SUB Hirose Electric
16138 SDAB-37S05 STRAIGHT/METAL PCB D-SUB Hirose Electric
16139 SDAB-50P STRAIGHT/METAL PCB D-SUB Hirose Electric
16140 SDAB-50P05 STRAIGHT/METAL PCB D-SUB Hirose Electric


Datasheets found :: 17096
Page: | 534 | 535 | 536 | 537 | 538 | 539 | 540 | 541 | 542 |



© 2024 - www Datasheet Catalog com