| No. |
Part Name |
Description |
Manufacturer |
| 1621 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 1622 |
2SC828 |
Audio Frequency Small Signal Transistors |
Semiconductor Technology |
| 1623 |
2SC829 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1624 |
2SC863 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1625 |
2SC864 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1626 |
2SC941 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1627 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 1628 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 1629 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 1630 |
2SC942 |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 1631 |
2SC942TM |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 1632 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 1633 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 1634 |
2SC982 |
Silicon NPN epitaxial planar transistor, Printer Drive, Core Drive and LED drive, low frequency amplifier applications |
TOSHIBA |
| 1635 |
2SC982 |
NPN EPITAXIAL TYPE (PRINTER DRIVE/ CORE DRIVER AND LED DRIVE/ LOW FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1636 |
2SC982TM |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications |
TOSHIBA |
| 1637 |
2SC983 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1638 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 1639 |
2SC991 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1640 |
2SC992 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1641 |
2SC995 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1642 |
2SC996 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1643 |
2SC997 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1644 |
2SD0592A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1645 |
2SD0601A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1646 |
2SD0602A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1647 |
2SD0638 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1648 |
2SD0662 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1649 |
2SD0662B |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1650 |
2SD0814 |
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
Panasonic |
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