| No. |
Part Name |
Description |
Manufacturer |
| 1621 |
PTF |
Industrial, Very Low Noise and Voltage Coefficient, Small Package, 100% Laser Spiraled, Very Good High Frequency Characteristics, Acceptance Testing Available, Can Replace Wirewound Bobbins, Superior Moisture Protection |
Vishay |
| 1622 |
RB876W |
Diodes > High Frequency Diodes |
ROHM |
| 1623 |
RB886G |
Diodes > High Frequency Diodes |
ROHM |
| 1624 |
RCME |
High Frequency Performance Molded Metal film Resistors |
Vishay |
| 1625 |
RF2444 |
HIGH FREQUENCY LNA/MIXER |
RF Micro Devices |
| 1626 |
RF2444PCBA-H |
High frequency LNA/mixer |
RF Micro Devices |
| 1627 |
RF2494 |
HIGH FREQUENCY LNA/MIXER |
RF Micro Devices |
| 1628 |
RF2494PCBA-H |
High frequency LNA/ mixer |
RF Micro Devices |
| 1629 |
RM20C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1630 |
RM20CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1631 |
RM20CA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1632 |
RM20DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1633 |
RM20DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1634 |
RM300CA-9W |
FAST RECOVERY DIODE MODULES HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1635 |
RM50C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1636 |
RM50CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1637 |
RM50CA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1638 |
RM50DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1639 |
RM50DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1640 |
RN142S |
Diodes > High Frequency Diodes > PIN diodes |
ROHM |
| 1641 |
RN731V |
Diodes > High Frequency Diodes > PIN diodes |
ROHM |
| 1642 |
RN739F |
Diodes > High Frequency Diodes > PIN diodes |
ROHM |
| 1643 |
SB110 |
100V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection apllication |
Diodes |
| 1644 |
SBA120-18J |
Dual 180 V, 12 A Schottky Barrier Diode for High Frequency Rectification |
ON Semiconductor |
| 1645 |
SBM560 |
60V; 5A surface mount schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications |
Diodes |
| 1646 |
SBR100-10J |
Dual 100 V, 10 A Schottky Barrier Diode for High Frequency Rectification |
ON Semiconductor |
| 1647 |
SE5539 |
High frequency operational amplifier |
Philips |
| 1648 |
SE5539F |
High frequency operational amplifier |
Philips |
| 1649 |
SE5539N |
High frequency operational amplifier |
Philips |
| 1650 |
SFT226 |
Germanium High Frequency Transistor |
COSEM |
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