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Datasheets for MSO

Datasheets found :: 27513
Page: | 51 | 52 | 53 | 54 | 55 | 56 | 57 | 58 | 59 |
No. Part Name Description Manufacturer
1621 AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS SGS Thomson Microelectronics
1622 AM1214-300 L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1623 AM1214-325 L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1624 AM1416-001 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
1625 AM1416-003 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
1626 AM1416-100 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
1627 AM1416-200 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
1628 AM1517-012 SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1629 AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS SGS Thomson Microelectronics
1630 AM1517-035 High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems SGS Thomson Microelectronics
1631 AM1616-050 High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT SGS Thomson Microelectronics
1632 AM2023-001 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1633 AM2023-003 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1634 AM2023-006 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1635 AM2327-001 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1636 AM2327-003 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1637 AM2327-005 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1638 AM2729-110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1639 AM2729-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS SGS Thomson Microelectronics
1640 AM2931-110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1641 AM2931-125 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1642 AM3135-007 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1643 AM3135-014 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1644 AM3135-025 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1645 AM3135-035 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1646 AM3135-045 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1647 AM3135-25N High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1648 AM80610-018 High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz SGS Thomson Microelectronics
1649 AM80610-030 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS SGS Thomson Microelectronics
1650 AM80610-050 High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz SGS Thomson Microelectronics


Datasheets found :: 27513
Page: | 51 | 52 | 53 | 54 | 55 | 56 | 57 | 58 | 59 |



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