| No. |
Part Name |
Description |
Manufacturer |
| 1621 |
P201D |
CdS photoconductive cell |
Hamamatsu Corporation |
| 1622 |
P2038-02 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 1623 |
P2038-03 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 1624 |
P2532-01 |
PbS photoconductive detector |
Hamamatsu Corporation |
| 1625 |
P2680-02 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 1626 |
P2680-03 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 1627 |
P2682-01 |
PbS photoconductive detector |
Hamamatsu Corporation |
| 1628 |
P2748 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1629 |
P2748-40 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1630 |
P2748-41 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1631 |
P2748-42 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1632 |
P2750 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1633 |
P2750-06 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1634 |
P2750-08 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1635 |
P3207-05 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 1636 |
P3257 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1637 |
P3257-01 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1638 |
P3257-10 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1639 |
P3257-25 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1640 |
P3257-30 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1641 |
P3257-31 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1642 |
P3257-50 |
Allowable current:40mA; MCT photoconductive detector: dewar type detector with high sensitivity and high-speed response in long wavelength range |
Hamamatsu Corporation |
| 1643 |
P368 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 1644 |
P380 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 1645 |
P380-7R |
CbS photoconductive cell |
Hamamatsu Corporation |
| 1646 |
P3872 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 1647 |
P3981 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1648 |
P3981-01 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1649 |
P3MXP1039PC-V |
Photoconductive Detectors |
Microsemi |
| 1650 |
P4249-08 |
MCT photoconductive detector |
Hamamatsu Corporation |
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