| No. |
Part Name |
Description |
Manufacturer |
| 1621 |
2N3053 |
NPN silicon annular transistor designed for medium-current applications |
Motorola |
| 1622 |
2N3053 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1623 |
2N3054 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 1624 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 1625 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 1626 |
2N3055 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 1627 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 1628 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 1629 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 1630 |
2N3114CSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 1631 |
2N3137 |
NPN silicon transistor for large signal VHF and UHF applications |
Motorola |
| 1632 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 1633 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 1634 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 1635 |
2N3209CSM |
HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1636 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 1637 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 1638 |
2N3252 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 1639 |
2N3253 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 1640 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1641 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1642 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1643 |
2N3286 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1644 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 1645 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 1646 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 1647 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 1648 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 1649 |
2N3323 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 1650 |
2N3324 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
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