| No. |
Part Name |
Description |
Manufacturer |
| 1621 |
2N3713 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1622 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1623 |
2N3714 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1624 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1625 |
2N3715 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1626 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1627 |
2N3716 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1628 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1629 |
2N3722 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 1630 |
2N3723 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 1631 |
2N3733 |
NPN silicon transistor designed for amplifier, frequency multiplier and oscillator applications |
Motorola |
| 1632 |
2N376A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 1633 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 1634 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
| 1635 |
2N3789 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1636 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1637 |
2N3790 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 1638 |
2N3790 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1639 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1640 |
2N3791 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 1641 |
2N3791 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1642 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1643 |
2N3792 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1644 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1645 |
2N3796 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 1646 |
2N3797 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 1647 |
2N3800 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 1648 |
2N3801 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 1649 |
2N3802 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 1650 |
2N3803 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
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