| No. |
Part Name |
Description |
Manufacturer |
| 1621 |
STU65D2 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 1622 |
STU65D5 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 1623 |
STU65E0 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 1624 |
STU65E5 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 1625 |
STU65G0 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 1626 |
STU65G4 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 1627 |
STU65N3LLH5 |
N-channel 30 V, 0.0061 Ohm, 65 A, IPAK STripFET(TM) V Power MOSFET |
ST Microelectronics |
| 1628 |
STU6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 1629 |
STU6N62K3 |
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in IPAK |
ST Microelectronics |
| 1630 |
STU6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in IPAK package |
ST Microelectronics |
| 1631 |
STU6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package |
ST Microelectronics |
| 1632 |
STU6N95K5 |
N-channel 950 V, 1 Ohm typ., 9 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package |
ST Microelectronics |
| 1633 |
STU6NA100 |
N - CHANNEL 1000V - 1.45W - 6A - Max220, FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 1634 |
STU6NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 1635 |
STU6NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 1636 |
STU6NA90 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 1637 |
STU6NA90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 1638 |
STU6NA90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 1639 |
STU6NF10 |
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET |
ST Microelectronics |
| 1640 |
STU75N3LLH6 |
N-channel 30 V, 0.0042 Ohm, 75 A, IPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
| 1641 |
STU7N60M2 |
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 1642 |
STU7N65M2 |
N-channel 650 V, 0.96 Ohm typ., 5 A MDmesh M2 Power MOSFET in a IPAK package |
ST Microelectronics |
| 1643 |
STU7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package |
ST Microelectronics |
| 1644 |
STU7NA80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 1645 |
STU7NA80 |
N - CHANNEL 800V - 1.3 Ohm - 6.5A - Max220 FAST POWER MOSFET |
SGS Thomson Microelectronics |
| 1646 |
STU7NA80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 1647 |
STU7NA90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 1648 |
STU7NA90 |
N - CHANNEL 900V - 1.05 Ohm - 7A - Max220 FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 1649 |
STU7NA90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 1650 |
STU7NB100 |
N - CHANNEL 1000V - 1.2W - 7.3A - Max220, PowerMESH MOSFET |
SGS Thomson Microelectronics |
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