No. |
Part Name |
Description |
Manufacturer |
1651 |
MJE1101 |
5A darlington power NPN transistors complementary silicon 70W 60V |
Motorola |
1652 |
MJE171 |
12.500W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
1653 |
MJE171 |
Trans GP BJT PNP 60V 3A 3-Pin TO-126 Box |
New Jersey Semiconductor |
1654 |
MJE171 |
Power 3A 60V PNP |
ON Semiconductor |
1655 |
MJE181 |
12.500W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
1656 |
MJE181 |
Trans GP BJT NPN 60V 3A 3-Pin TO-126 Box |
New Jersey Semiconductor |
1657 |
MJE181 |
Power 3A 60V NPN |
ON Semiconductor |
1658 |
MJE2011 |
5A Complementary Medium-Power PNP Silicon Transistor 80W 60V |
Motorola |
1659 |
MJE2021 |
5A Complementary Medium-Power NPN Silicon Transistor 80W 60V |
Motorola |
1660 |
MJE2801 |
10 Ampere High-Power NPN Silicon Transistor 60V 90W complementary to PNP MJE2901 |
Motorola |
1661 |
MJE2801K |
10A High-Power NPN Silicon Transistor 60V 90W |
Motorola |
1662 |
MJE2901 |
10 Ampere High-Power PNP Silicon Transistor 60V 90W complementary to NPN MJE2801 |
Motorola |
1663 |
MJE2901K |
High Power PNP Silicon 10A Transistor 60V 90W |
Motorola |
1664 |
MJE2955K |
10A High-Power PNP Silicon Transistor 60V 90W |
Motorola |
1665 |
MJE2955T |
75.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 10.000A Ic, 5 hFE. |
Continental Device India Limited |
1666 |
MJE2955T |
Trans GP BJT PNP 60V 10A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
1667 |
MJE2955T |
Power 10A 60V Discrete PNP |
ON Semiconductor |
1668 |
MJE2955T |
PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
USHA India LTD |
1669 |
MJE3055K |
10A High-Power NPN Silicon Transistor 60V 90W |
Motorola |
1670 |
MJE3055T |
Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) TO-220 Tube |
New Jersey Semiconductor |
1671 |
MJE3055T |
Power 10A 60V Discrete NPN |
ON Semiconductor |
1672 |
MJE3055T |
NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
USHA India LTD |
1673 |
MJE6040 |
Trans Darlington PNP 60V 8A |
New Jersey Semiconductor |
1674 |
MJE6041 |
Trans Darlington NPN 60V 8A |
New Jersey Semiconductor |
1675 |
MJE6041T |
Trans Darlington NPN 60V 8A |
New Jersey Semiconductor |
1676 |
MJE6042 |
Trans Darlington NPN 60V 8A |
New Jersey Semiconductor |
1677 |
MJE6043 |
Trans Darlington NPN 60V 8A |
New Jersey Semiconductor |
1678 |
MJE6044 |
Trans Darlington NPN 60V 8A |
New Jersey Semiconductor |
1679 |
MJE6045 |
Trans Darlington NPN 60V 8A |
New Jersey Semiconductor |
1680 |
MJE700 |
Trans Darlington PNP 60V 4A 3-Pin(3+Tab) TO-126 |
New Jersey Semiconductor |
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