| No. |
Part Name |
Description |
Manufacturer |
| 1651 |
P201B |
CdS photoconductive cell |
Hamamatsu Corporation |
| 1652 |
P201D |
CdS photoconductive cell |
Hamamatsu Corporation |
| 1653 |
P2038-02 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 1654 |
P2038-03 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 1655 |
P2532-01 |
PbS photoconductive detector |
Hamamatsu Corporation |
| 1656 |
P2680-02 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 1657 |
P2680-03 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 1658 |
P2682-01 |
PbS photoconductive detector |
Hamamatsu Corporation |
| 1659 |
P2748 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1660 |
P2748-40 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1661 |
P2748-41 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1662 |
P2748-42 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1663 |
P2750 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1664 |
P2750-06 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1665 |
P2750-08 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1666 |
P3207-05 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 1667 |
P3257 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1668 |
P3257-01 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1669 |
P3257-10 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1670 |
P3257-25 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 1671 |
P3257-30 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1672 |
P3257-31 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1673 |
P3257-50 |
Allowable current:40mA; MCT photoconductive detector: dewar type detector with high sensitivity and high-speed response in long wavelength range |
Hamamatsu Corporation |
| 1674 |
P368 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 1675 |
P380 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 1676 |
P380-7R |
CbS photoconductive cell |
Hamamatsu Corporation |
| 1677 |
P3872 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 1678 |
P3981 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1679 |
P3981-01 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1680 |
P3MXP1039PC-V |
Photoconductive Detectors |
Microsemi |
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