| No. |
Part Name |
Description |
Manufacturer |
| 1651 |
PN2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 1652 |
PN4416 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 1653 |
PN918 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 1654 |
PT4572A |
NPN Silicon High Frequency Transistor |
Motorola |
| 1655 |
PT4579 |
NPN Silicon High Frequency Transistor |
Motorola |
| 1656 |
PTF |
Industrial, Very Low Noise and Voltage Coefficient, Small Package, 100% Laser Spiraled, Very Good High Frequency Characteristics, Acceptance Testing Available, Can Replace Wirewound Bobbins, Superior Moisture Protection |
Vishay |
| 1657 |
RB876W |
Diodes > High Frequency Diodes |
ROHM |
| 1658 |
RB886G |
Diodes > High Frequency Diodes |
ROHM |
| 1659 |
RCME |
High Frequency Performance Molded Metal film Resistors |
Vishay |
| 1660 |
RF2444 |
HIGH FREQUENCY LNA/MIXER |
RF Micro Devices |
| 1661 |
RF2444PCBA-H |
High frequency LNA/mixer |
RF Micro Devices |
| 1662 |
RF2475 |
DUAL-BAND LOW NOISE AMPLIFIER/MIXER WITH FREQUENCY DOUBLER |
RF Micro Devices |
| 1663 |
RF2475PCBA |
Dual-band low noise amplifier with frequency doubler |
RF Micro Devices |
| 1664 |
RF2494 |
HIGH FREQUENCY LNA/MIXER |
RF Micro Devices |
| 1665 |
RF2494PCBA-H |
High frequency LNA/ mixer |
RF Micro Devices |
| 1666 |
RM20C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1667 |
RM20CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1668 |
RM20CA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1669 |
RM20DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1670 |
RM20DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1671 |
RM300CA-9W |
FAST RECOVERY DIODE MODULES HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1672 |
RM50C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1673 |
RM50CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1674 |
RM50CA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1675 |
RM50DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1676 |
RM50DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1677 |
RN142S |
Diodes > High Frequency Diodes > PIN diodes |
ROHM |
| 1678 |
RN731V |
Diodes > High Frequency Diodes > PIN diodes |
ROHM |
| 1679 |
RN739F |
Diodes > High Frequency Diodes > PIN diodes |
ROHM |
| 1680 |
SB110 |
100V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection apllication |
Diodes |
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