No. |
Part Name |
Description |
Manufacturer |
1651 |
AM80912-085 |
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
1652 |
AM81214-006 |
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS |
SGS Thomson Microelectronics |
1653 |
AM81214-015 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
1654 |
AM81214-030 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
1655 |
AM81214-060 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
1656 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
1657 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
1658 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
1659 |
AM81719-030 |
TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
1660 |
AM81719-040 |
RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS |
SGS Thomson Microelectronics |
1661 |
AM81720-012 |
COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
1662 |
AM81720-020 |
Transistor for communications applications |
SGS Thomson Microelectronics |
1663 |
AM81922-018 |
Transistor for communications applications |
SGS Thomson Microelectronics |
1664 |
AM82022-020 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
1665 |
AM82023-010 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
1666 |
AM82023-016 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
1667 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
1668 |
AM82223-010 |
TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
1669 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
1670 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
1671 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
1672 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
1673 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
1674 |
AM82325-040 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
1675 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
1676 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
1677 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
1678 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
1679 |
AM82729-030 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
1680 |
AM82729-060 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
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