No. |
Part Name |
Description |
Manufacturer |
1651 |
KBU602 |
Diode Rectifier Bridge Single 100V 6A 4-Pin Case KBU |
New Jersey Semiconductor |
1652 |
KBU6A |
Diode Rectifier Bridge Single 50V 6A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1653 |
KBU6B |
Diode Rectifier Bridge Single 100V 6A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1654 |
KBU6D |
Diode Rectifier Bridge Single 200V 6A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1655 |
KBU6G |
Diode Rectifier Bridge Single 400V 6A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1656 |
KBU6J |
Diode Rectifier Bridge Single 600V 6A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1657 |
KBU6K |
Diode Rectifier Bridge Single 800V 6A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1658 |
KBU6M |
Diode Rectifier Bridge Single 1KV 6A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1659 |
KBU8A |
Diode Rectifier Bridge Single 50V 8A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1660 |
KBU8B |
Diode Rectifier Bridge Single 100V 8A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1661 |
KBU8D |
Diode Rectifier Bridge Single 200V 8A 4-Pin Case KBU |
New Jersey Semiconductor |
1662 |
KBU8G |
Diode Rectifier Bridge Single 400V 8A 4-Pin Case KBU |
New Jersey Semiconductor |
1663 |
KBU8J |
Diode Rectifier Bridge Single 600V 8A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1664 |
KBU8K |
Diode Rectifier Bridge Single 800V 8A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1665 |
KBU8M |
Diode Rectifier Bridge Single 1KV 8A 4-Pin Case KBU Bulk |
New Jersey Semiconductor |
1666 |
L125 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1667 |
L225 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1668 |
L2711 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1669 |
L2721 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1670 |
L2801 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1671 |
L2821 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1672 |
L508 |
High Voltage Diode Rectifier Module |
IXYS Corporation |
1673 |
L8701P |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1674 |
L8711P |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1675 |
L8721P |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1676 |
L88016 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1677 |
L8801P |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1678 |
L8821P |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
1679 |
LA1650 |
Time Code Reception ICs |
SANYO |
1680 |
LA1650C |
Time Code Reception ICs |
SANYO |
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