No. |
Part Name |
Description |
Manufacturer |
1651 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
1652 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
1653 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
1654 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
1655 |
IRF250 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
1656 |
IRF252 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
1657 |
IRF610 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
1658 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
1659 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
1660 |
IRF622 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
1661 |
IRF630 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
1662 |
IRF632 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
1663 |
ISL55001 |
High Supply Voltage 220MHz Unity-Gain Stable Operational Amplifier |
Intersil |
1664 |
ISL55002 |
High Supply Voltage 200MHz Unity-Gain Stable Operational Amplifier |
Intersil |
1665 |
ISL55004 |
High Supply Voltage 200MHz Unity-Gain Stable Operational Amplifier |
Intersil |
1666 |
ISL84051 |
Multiplexer, 8 to 1, Low-Voltage 2V-12V, Single or Dual Supply, R(on) = 100 Ohms, TTL/CMOS inputs |
Intersil |
1667 |
ISL84052 |
Multiplexer, Dual 4 to 1, Low-Voltage 2V-12V, Single or Dual Supply, R(on) = 100 Ohms, TTL/CMOS inputs |
Intersil |
1668 |
ISL84053 |
Analog Switch, Triple SPDT, Low-Voltage 2V-12V, Single or Dual Supply, R(on) = 100 Ohms, TTL/CMOS inputs |
Intersil |
1669 |
JPS250PS24 |
Switching power supply. Max. power 250 W. Output voltage 24 V. Output current: 10.4 A (with 18 CFM); 8.5 A (convection cooled). |
International Power Sources |
1670 |
JPS250PS24C |
Switching power supply. Max. power 250 W. Output voltage 24 V. Output current: 10.4 A (with 18 CFM); 8.5 A (convection cooled). |
International Power Sources |
1671 |
K240 |
Silicon bilateral voltage triggered switch. Breakover voltage 220V (min) to 250V (max). |
Ceramate |
1672 |
KBL403 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 4.0 A. |
Shanghai Sunrise Electronics |
1673 |
KBPC1002 |
10 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. |
Comchip Technology |
1674 |
KBPC1002 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
1675 |
KBPC1502 |
15 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. |
Comchip Technology |
1676 |
KBPC1502 |
Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V |
Wing Shing Computer Components |
1677 |
KBPC1502 |
Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V |
Wing Shing Computer Components |
1678 |
KBPC1502W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
1679 |
KBPC1504 |
Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V |
Wing Shing Computer Components |
1680 |
KBPC2502 |
25 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. |
Comchip Technology |
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