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Datasheets for TAGE 2

Datasheets found :: 3749
Page: | 52 | 53 | 54 | 55 | 56 | 57 | 58 | 59 | 60 |
No. Part Name Description Manufacturer
1651 IRF220 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
1652 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
1653 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
1654 IRF232 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
1655 IRF250 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
1656 IRF252 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. General Electric Solid State
1657 IRF610 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
1658 IRF612 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
1659 IRF620 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
1660 IRF622 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
1661 IRF630 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
1662 IRF632 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
1663 ISL55001 High Supply Voltage 220MHz Unity-Gain Stable Operational Amplifier Intersil
1664 ISL55002 High Supply Voltage 200MHz Unity-Gain Stable Operational Amplifier Intersil
1665 ISL55004 High Supply Voltage 200MHz Unity-Gain Stable Operational Amplifier Intersil
1666 ISL84051 Multiplexer, 8 to 1, Low-Voltage 2V-12V, Single or Dual Supply, R(on) = 100 Ohms, TTL/CMOS inputs Intersil
1667 ISL84052 Multiplexer, Dual 4 to 1, Low-Voltage 2V-12V, Single or Dual Supply, R(on) = 100 Ohms, TTL/CMOS inputs Intersil
1668 ISL84053 Analog Switch, Triple SPDT, Low-Voltage 2V-12V, Single or Dual Supply, R(on) = 100 Ohms, TTL/CMOS inputs Intersil
1669 JPS250PS24 Switching power supply. Max. power 250 W. Output voltage 24 V. Output current: 10.4 A (with 18 CFM); 8.5 A (convection cooled). International Power Sources
1670 JPS250PS24C Switching power supply. Max. power 250 W. Output voltage 24 V. Output current: 10.4 A (with 18 CFM); 8.5 A (convection cooled). International Power Sources
1671 K240 Silicon bilateral voltage triggered switch. Breakover voltage 220V (min) to 250V (max). Ceramate
1672 KBL403 Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 4.0 A. Shanghai Sunrise Electronics
1673 KBPC1002 10 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. Comchip Technology
1674 KBPC1002 Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 10.0 A. Shanghai Sunrise Electronics
1675 KBPC1502 15 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. Comchip Technology
1676 KBPC1502 Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V Wing Shing Computer Components
1677 KBPC1502 Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V Wing Shing Computer Components
1678 KBPC1502W Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 15 A. Shanghai Sunrise Electronics
1679 KBPC1504 Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V Wing Shing Computer Components
1680 KBPC2502 25 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. Comchip Technology


Datasheets found :: 3749
Page: | 52 | 53 | 54 | 55 | 56 | 57 | 58 | 59 | 60 |



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