| No. |
Part Name |
Description |
Manufacturer |
| 16591 |
2SB1457 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE, POWER SWITCHING AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 16592 |
2SB1457 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE, POWER SWITCHING AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 16593 |
2SB149 |
Low-Speed, High Power Switching Transistor |
TOSHIBA |
| 16594 |
2SB156 |
Germanium PNP Transistor Alloyed Junction Vcbo=-16V, Vebo=-2.5V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 16595 |
2SB156 |
Germanium PNP Transistor Alloyed Junction Vcbo=-16V, Vebo=-2.5V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 16596 |
2SB1568 |
Power Transistor (−80V, −4A) |
ROHM |
| 16597 |
2SB156A |
Germanium PNP Transistor Alloyed Junction Vcbo=-20V, Vebo=-6V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 16598 |
2SB156A |
Germanium PNP Transistor Alloyed Junction Vcbo=-20V, Vebo=-6V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 16599 |
2SB1578 |
Low freq. power amp., medium-speed switching transistor |
NEC |
| 16600 |
2SB1617 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE, POWER SWITCHING AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 16601 |
2SB1617 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE, POWER SWITCHING AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 16602 |
2SB1641 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. |
TOSHIBA |
| 16603 |
2SB1641 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. |
TOSHIBA |
| 16604 |
2SB1657 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS |
NEC |
| 16605 |
2SB1658 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS |
NEC |
| 16606 |
2SB1697 |
Low Frequency Amplifier (-12V, -2A) |
ROHM |
| 16607 |
2SB1709 |
Genera purpose amplification(−12V, −1.5A) |
ROHM |
| 16608 |
2SB1732 |
Genera purpose amplification(−12V, −1.5A) |
ROHM |
| 16609 |
2SB189 |
Germanium PNP alloy junction transistor, audio medium power amplifier applications |
TOSHIBA |
| 16610 |
2SB235 |
Low-Speed, High Power Switching Transistor |
TOSHIBA |
| 16611 |
2SB236 |
Low-Speed, High Power Switching Transistor |
TOSHIBA |
| 16612 |
2SB237 |
Low-Speed, High Power Switching Transistor |
TOSHIBA |
| 16613 |
2SB331H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 16614 |
2SB331H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 16615 |
2SB332H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 16616 |
2SB332H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 16617 |
2SB333H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 16618 |
2SB333H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 16619 |
2SB334H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 16620 |
2SB334H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
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