| No. |
Part Name |
Description |
Manufacturer |
| 16711 |
1S6150 |
Silicon power zener diode 150V |
Texas Instruments |
| 16712 |
1S6150A |
Silicon power zener diode 150V, ±5% tolerance |
Texas Instruments |
| 16713 |
1S6150R |
Silicon power zener diode 150V, reverse polarity |
Texas Instruments |
| 16714 |
1S6160 |
Silicon power zener diode 160V |
Texas Instruments |
| 16715 |
1S6160A |
Silicon power zener diode 160V, ±5% tolerance |
Texas Instruments |
| 16716 |
1S6160R |
Silicon power zener diode 160V, reverse polarity |
Texas Instruments |
| 16717 |
1S6180 |
Silicon power zener diode 180V |
Texas Instruments |
| 16718 |
1S6180A |
Silicon power zener diode 180V, ±5% tolerance |
Texas Instruments |
| 16719 |
1S6180R |
Silicon power zener diode 180V, reverse polarity |
Texas Instruments |
| 16720 |
1S6200 |
Silicon power zener diode 200V |
Texas Instruments |
| 16721 |
1S6200A |
Silicon power zener diode 200V, ±5% tolerance |
Texas Instruments |
| 16722 |
1S6200R |
Silicon power zener diode 200V, reverse polarity |
Texas Instruments |
| 16723 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16724 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16725 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16726 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16727 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16728 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16729 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16730 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16731 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16732 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16733 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16734 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16735 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16736 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16737 |
1SMA110Z |
110 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 16738 |
1SMA110Z |
SURFACE MOUNT SILICON ZENER DIODE |
TRSYS |
| 16739 |
1SMA120Z |
120 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 16740 |
1SMA120Z |
SURFACE MOUNT SILICON ZENER DIODE |
TRSYS |
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